瞬时大电流下微机电引信硅通孔封装的失效机理与实验研究

doi:10.3969/j.issn.1000-1093.2014.09.005

兵工学报 ›› 2014, Vol. 35 ›› Issue (9): 1356-1362.doi: 10.3969/j.issn.1000-1093.2014.09.005

瞬时大电流下微机电引信硅通孔封装的失效机理与实验研究

刘芳怡，娄文忠，丁旭冉，王辅辅，王瑛

（北京理工大学机电学院，北京 100081）

收稿日期:2013-11-15 修回日期:2013-11-15 上线日期:2014-11-03
作者简介:刘芳怡（1990—），女，硕士研究生
基金资助:
总装备部重点基金项目（914A05050313BQ1014）；武器装备预先研究项目（51305060302）

The Failure Mechanism and Experimental Study of MEMS Fuze TSV Package at High Transient Current

LIU Fang-yi， LOU Wen-zhong， DING Xu-ran， WANG Fu-fu， WANG Ying

(School of Mechatronical Engineering，Beijing Institute of Technology，Beijing 100081，China)

Received:2013-11-15 Revised:2013-11-15 Online:2014-11-03

摘要/Abstract

摘要： 随着引信向微型化、智能化、灵巧化发展，对引信采用三维封装是实现其小型化最为前景的技术。硅通孔（TSV）是三维封装的关键技术，广泛应用在微机电系统(MEMS)的集成中，具有封装尺寸小和能量消耗低的优点。研究了一种应用于MEMS引信的TSV三维封装技术，该MEMS引信的工作模式要求TSV在引信起爆控制时的瞬时大电流冲击下，电阻改变量在规定允许的范围内。利用有限元分析软件计算TSV在瞬时大电流下的升温曲线，并进行分组实验，对TSV分别施加40 V、330 μF电容放电条件，10 V、330 μF电容放电条件和4 V、100 μF电容放电条件。通过对比仿真结果与实验结果，得到TSV的潜在的失效模式和其承载瞬时大电流的能力。通过上述结论分析得出在10 V、330 μF电容放电条件和4 V、100 μF电容放电条件下，TSV封装技术可以满足MEMS引信的正常工作。

关键词: 兵器科学与技术, 引信, 瞬时大电流, 硅通孔, 有限元仿真, 电容放电

Abstract: With the development in the miniaturization, intellectualization and dexterity of fuze, the 3D package is the most promising technology to realize fuze miniaturization. Through-silicon via (TSV), the key technology of 3D packages, has the advantages of small package size and low power consumption, and is widely used in microelectronic system integration. A TSV-based 3D package technology for MEMS fuze is presented. The work mode of MEMS fuze requires that the resistance change of TSV in the allowable range at a high transient current when the fuze is detonating. Temperature curve of TSV at a high transient current is calculated using the finite element analysis software. Three groups of TSVs are experimented: 40 V, 330 μF capacitor discharge; 10 V, 330 μF capacitor discharge; and 4 V, 100 μF capacitor discharge. The potential failure modes and transient current carrying capacity of TSV are obtained through the comparison of simulation and experimental results. The result shows that the TSV package can meet the normal working of the MEMS fuze in the conditions of 10 V, 330 μF capacitor discharge and 4 V, 100 μF capacitor discharge.

Key words: ordnance science and technology, fuze, high transient current, TSV, finite element simulation, capacitor discharge

中图分类号:

TJ43
TN605

刘芳怡，娄文忠，丁旭冉，王辅辅，王瑛. 瞬时大电流下微机电引信硅通孔封装的失效机理与实验研究[J]. 兵工学报, 2014, 35(9): 1356-1362.

LIU Fang-yi， LOU Wen-zhong， DING Xu-ran， WANG Fu-fu， WANG Ying. The Failure Mechanism and Experimental Study of MEMS Fuze TSV Package at High Transient Current[J]. Acta Armamentarii, 2014, 35(9): 1356-1362.

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瞬时大电流下微机电引信硅通孔封装的失效机理与实验研究

The Failure Mechanism and Experimental Study of MEMS Fuze TSV Package at High Transient Current

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