基于反馈近似损伤的振动加速激励设计方法

doi:10.12382/bgxb.2024.0138

摘要/Abstract

摘要：

机电产品高加速剖面制定方法存在剖面关键要素与激励失效机制关联性不明确、故障激发效率低、试验成本高等问题。为打通累积损伤与振动试验剖面关键要素之间的关联机制,提出基于反馈近似损伤的振动加速激励设计方法,通过动态控制损伤增量,实现对振动试验剖面的精细化设计。结合振动损伤机制分析与功率谱密度频域解析技术,量化振动激励与累积损伤之间的映射关系,建立振动激励-损伤对应模型(Vibration Excitation-Damage Corresponding Model,CM-VED),以某型引信振动高加速步进试验为例验证所提方法的有效性。研究结果表明:获得的振动高加速试验剖面较标准固步法破坏极限激发精度提高60%,在保证高激发精度的基础上时间较均分法缩短33.33%;所提CM-VED可为建立激励-损伤对应关系提供理论依据;所提基于反馈近似损伤的振动加速激励设计方法可在保证激发精度的前提下降低试验成本,为机电产品振动高加速试验剖面设计提供技术支撑。

关键词: 高加速试验, 近似损伤, 振动激励, 剖面设计, 量化映射

Abstract:

The method for formulating the high-acceleration profiles for electromechanical products has some problems,such as unclear correlation between key element of profile and excitation failure mechanism,low fault excitation efficiency,and high testing costs.To establish a correlation mechanism between the cumulative damage and the key elements of vibration test profile,a vibration acceleration excitation design method based on feedback approximate damage is proposed.The refined design of vibration test profile is achieved through the dynamic control of damage increment.By integrating the analysis of vibration damage mechanism and the frequency-domain analytical technology of power spectral density,the mapping relationship between vibration excitation and cumulative damage is quantified,and a vibration excitation-damage corresponding model (CM-VED) is established.The validity of the proposed method is verified by taking the high-acceleration step vibration test of a fuse as an example.The research findings indicate that the obtained high-acceleration vibration test profile enhances the excitation accuracy of failure limit by 60% compared with the standard fixed-step method,and the time is shortened by 33.33% compared with that of the equal division method while ensuring high excitation accuracy.The proposed CM-VED can provide a theoretical basis for establishing the correspondence between excitation and damage.The proposed vibration acceleration excitation design method based on feedback approximate damage can reduce the test cost while guaranteeing the excitation accuracy,providing technical support for the design of the high-acceleration vibration test profile of electromechanical products.

Key words: high-acceleration test, approximate damage, vibration excitation, profile design, quantitative mapping

中图分类号:

TJ301

冯蕴雯, 杨容霁, 薛小锋, 刘佳奇, 高涛. 基于反馈近似损伤的振动加速激励设计方法[J]. 兵工学报, 2025, 46(2): 240138-.

FENG Yunwen, YANG Rongji, XUE Xiaofeng, LIU Jiaqi, GAO Tao. A Design Method of Vibration Accelerated Excitation Based on Feedback Approximate Damage[J]. Acta Armamentarii, 2025, 46(2): 240138-.

图/表 38

图1 CM-VED模型

Fig.1 CM-VED model

图2 高加速试验各阶段损伤增量变化趋势

Fig.2 Change trend of damage increment in each stage of high-acceleration test

图3 反馈近似损伤法思路

Fig.3 Feedback approximate damage method

图4 基于反馈近似损伤的振动加速激励设计流程

Fig.4 Design process of vibration acceleration excitation based on feedback approximate damage

图5 某型引信起爆系统故障树

Fig.5 Fault tree of a certain fuse detonation system

表1 故障树逻辑门、事件符号

Table 1 Fault tree logic gates and event symbols

符号	名称	含义
	或门	输入端只要有一个事件出现时即有输出
	基本事件	导致顶事件发生的最基本的或不能再向下分析的原因,是底事件的一种
	结果事件	由其他事件或事件组合导致的事件,分为顶事件和中间事件

表2 大电容应力、累积损伤分析结果

Table 2 Analyed results of large capacitance stress and cumulative damage

振动载荷/ Grms	元器件最大等效应力值/MPa			各级载荷下的损伤
振动载荷/ Grms	1σ	2σ	3σ	各级载荷下的损伤
5	20.3	40.6	60.9	1.059×10^-4
8	32.6	65.2	97.8	1.799×10^-3
11	44.8	89.6	134.4	0.0120
14	56.9	113.8	170.7	0.0503
17	69.2	138.4	207.6	0.1620
20	81.5	163.0	244.5	0.4310
21	85.5	171.0	256.5	0.5740
22	89.6	179.2	268.8	0.7600

图6 大电容累积损伤数据与CM-VED对比

Fig.6 Comparison chart between accumulated damage data of large capacitors and CM-VED

图7 反馈近似损伤法设计剖面步长流程

Fig.7 Process of designing the profile step size by feedback approximate damage method

图8 振动HALT试验剖面设计框架

Fig.8 Design framework for vibration HALT test profile

图9 某型引信外观及内部结构模块设计

Fig.9 Design of appearance and internal structural modules of a certain fuse

表3 内部结构模块元器件

Table 3 Corresponding table of internal structure module component names

标号	元器件名称	标号	元器件名称
A	场控晶闸管(MOS Controlled Thyristor,MCT)	G	电压比较器b
B	金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)	H	二极管
C	电压比较器a	I	贴片电阻
D	A/D转换器	J	变压器
E	信号调理器	K	陶瓷电阻
F	升压芯片、降压芯片	L	三极管

图10 某型引信可靠性框图

Fig.10 Reliability block diagram of a certain fuze

表4 某型引信故障模式分析表

Table 4 Analysis table for fault modes of a certain fuze

故障模式	局部影响	最终影响	故障原因	串联元器件类型
电压变换异常	高压点火电路不能正常点火	引信瞎火	高压变化单元异常	变压器、二极管、贴片电阻、升压芯片
电压变换异常	高压点火电路不能正常点火	引信瞎火	反馈控制单元异常	MCT、比较电路芯片a、A/D转换器、信号调理器
发火储能不足	雷管无法起爆	引信瞎火	储能电路单元异常	贴片电阻、二极管、三极管
发火储能不足	雷管无法起爆	引信瞎火	起爆触发单元异常	陶瓷电阻、MOSFET、比较电路芯片b

图11 振动功率谱密度

Fig.11 Vibration power spectral density curve

图12 x轴20Grms载荷下引信等效应力云图

Fig.12 Equivalent stress cloud map of fuze under 20Grms load along x-axis

表5 大陶瓷电阻管脚最大等效应力、损伤值(x轴)

Table 5 Maximum equivalent stress and damage value of large ceramic resistor pin (x-axis)

振动载荷/ Grms	元器件最大等效应力值/MPa			各级载荷下的损伤	合计损伤值
振动载荷/ Grms	1σ	2σ	3σ	各级载荷下的损伤	合计损伤值
5	17.136	34.272	51.408	3.840×10^-5	0.768
10	34.295	68.590	102.885	0.00240
15	51.439	102.878	154.317	0.0275
20	68.590	137.180	205.770	0.154
25	85.744	171.488	257.232	0.584
30	102.890	205.780	308.670	1.738	2.510

图13 某型引信CM-VED

Fig.13 CM-VED of a certain fuse

图14 反馈近似损伤法设计的试验剖面图

Fig.14 Test profile designed by feedback approximation damage method

表6 反馈近似损伤法剖面步长划分

Table 6 Profile step division of feedback approximate damage method

步进顺序	振动载荷/Grms	各级载荷下的损伤	合计损伤值
1	5.00	3.865×10^-5	0.839
2	10.00	0.00240
3	15.00	0.0276
4	17.35	0.0659
5	19.35	0.1270
6	21.35	0.2280
7	23.35	0.3890
8	25.35	0.6360	1.468

图15 某型引信振动HALT试验

Fig.15 Vibration HALT test of a certain fuse

图16 振动步进试验剖面

Fig.16 Vibration step test profile

图17 非振动情况产品测试结果

Fig.17 Product test results under non-vibration conditions

图18 x轴向振动HALT试验引信放电曲线

Fig.18 x axis vibration HALT test fuse discharge curve

表7 试验振动载荷与测试结果

Table 7 Test vibration load and test results

步进顺序	试验振动载荷/Grms	步长/Grms	测试结果
1	5	5	正常
2	10	5	正常
3	15	5	正常
4	17.35	2.35	正常
5	19.35	2	正常
6	21.35	2	正常
7	23.35	2	正常
8	25.35	2	异常
9	23.35	-2	异常

图19 振动试验引起大陶瓷电阻管脚裂纹

Fig.19 Cracks in the pins of large ceramic resistors caused by vibration tests

表8 标准固步法剖面步长划分

Table 8 Divided profile step size of standard fixed step method

步进顺序	振动载荷/Grms	各级载荷下的损伤	合计损伤值
1	5	3.840×10^-5	0.768
2	10	0.00240
3	15	0.0275
4	20	0.1540
5	25	0.5840
6	30	1.7380	2.510

图20 标准固步法设计的试验剖面图

Fig.20 Experimental profile designed using standard fixed step method

图21 标准固步法剖面下的振动HALT试验引信放电曲线

Fig.21 Discharge curve of vibration HALT test fuse under standard fixed step profile

表9 标准固步法试验振动载荷与测试结果

Table 9 Test vibration load and test results of standard fixed step method

步进顺序	试验振动载荷/Grms	步长/Grms	测试结果
1	5	5	正常
2	10	5	正常
3	15	5	正常
4	20	5	正常
5	25	5	正常
6	30	5	异常
7	25	-5	异常

图22 标准固步法振动试验引起大陶瓷电阻管脚裂纹

Fig.22 Cracks in the pins of large ceramic resistors caused by standard fixed step vibration test

表10 均分法剖面步长划分

Table 10 Divided profile step size of the averaging method

步进顺序	振动载荷/Grms	各级载荷下的损伤	合计损伤值
1	2	1.613×10^-7		0.578
2	4	1.018×10^-5
3	6	0.000110
4	8	0.000640
5	10	0.00243
6	12	0.00725
7	14	0.0182
8	16	0.0405
9	18	0.0820
10	20	0.154
11	22	0.272
12	24	0.458	1.036

图23 均分法设计的试验剖面图

Fig.23 Experimental profile designed using the averaging method

图24 均分法剖面下的振动HALT试验引信放电曲线

Fig.24 Discharge curve of vibration HALT test fuse under the uniform distribution method profile

表11 均分法试验振动载荷与测试结果

Table 11 Vibration load and test results of the equal distribution method test

步进顺序	试验振动载荷/Grms	步长/Grms	测试结果
1	2	2	正常
2	4	2	正常
3	6	2	正常
4	8	2	正常
5	10	2	正常
6	12	2	正常
7	14	2	正常
8	16	2	正常
9	18	2	正常
10	20	2	正常
11	22	2	正常
12	24	2	异常
13	22	-2	异常

图25 均分法振动试验引起大陶瓷电阻管脚裂纹

Fig.25 Cracks in the pins of large ceramic resistors caused by vibration testing using the equal distribution method

表12 步长划分方法对比

Table 12 Comparison of step size division methods

序号	方法	步长/Grms	破坏极限区间/Grms	激发精度对比	总时间/min	总时间对比	故障部位
1	反馈近似损伤法	5;2.35;2	[23.35,25.35]		80		大陶瓷电阻
2	标准固步法	5	[25,30]	1对比2:60%	60	1对比2:-33%	大陶瓷电阻
3	均分法	2	[22,24]	1对比3:0	120	1对比3:33%	大陶瓷电阻

图26 3种方法剖面步长曲线

Fig.26 Profile step curves of three methods

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故障模式	局部影响	最终影响	故障原因	串联元器件类型
电压变换异常	高压点火电路不能正常点火	引信瞎火	高压变化单元异常	变压器、二极管、贴片电阻、升压芯片
电压变换异常	高压点火电路不能正常点火	引信瞎火	反馈控制单元异常	MCT、比较电路芯片a、A/D转换器、信号调理器
发火储能不足	雷管无法起爆	引信瞎火	储能电路单元异常	贴片电阻、二极管、三极管
发火储能不足	雷管无法起爆	引信瞎火	起爆触发单元异常	陶瓷电阻、MOSFET、比较电路芯片b

故障模式	局部影响	最终影响	故障原因	串联元器件类型
电压变换异常	高压点火电路不能正常点火	引信瞎火	高压变化单元异常	变压器、二极管、贴片电阻、升压芯片
电压变换异常	高压点火电路不能正常点火	引信瞎火	反馈控制单元异常	MCT、比较电路芯片a、A/D转换器、信号调理器
发火储能不足	雷管无法起爆	引信瞎火	储能电路单元异常	贴片电阻、二极管、三极管
发火储能不足	雷管无法起爆	引信瞎火	起爆触发单元异常	陶瓷电阻、MOSFET、比较电路芯片b