SiC单晶切割过程中接触弧长建模与实验

doi:10.3969/j.issn.1000-1093.2016.05.015

兵工学报 ›› 2016, Vol. 37 ›› Issue (5): 879-887.doi: 10.3969/j.issn.1000-1093.2016.05.015

SiC单晶切割过程中接触弧长建模与实验

王嘉宾，李淑娟，梁列，汤奥斐，麻磊

(西安理工大学机械与精密仪器工程学院，陕西西安 710048)

收稿日期:2015-07-16 修回日期:2015-07-16 上线日期:2016-07-06
通讯作者: 王嘉宾 E-mail:806406143@qq.com
作者简介:王嘉宾(1991—)，男，硕士研究生
基金资助:
国家自然科学基金项目(51175442)；陕西省机械装备重点实验室基金项目(14JS061)

Modeling and Experiment of Contact Arc Length in SiC Monocrystal Cutting

WANG Jia-bin， LI Shu-juan， LIANG Lie， TANG Ao-fei， MA Lei

(School of Mechanical and Precision Instrument Engineering, Xi’an University of Technology, Xi’an 710048，Shaanxi，China)

Received:2015-07-16 Revised:2015-07-16 Online:2016-07-06
Contact: WANG Jia-bin E-mail:806406143@qq.com

摘要/Abstract

摘要： SiC单晶具有良好的物理和机械性能，广泛应用于大功率器件和集成电路行业，但因高的硬度和脆性，使其切割、研磨和抛光加工过程成为难点。在固结金刚石磨粒的线锯切割SiC单晶过程中，由于受各种因素的影响，使得切割力呈动态变化，而影响切割力的直接因素就是工件与线锯之间的接触弧长。根据线锯和工件的运动过程，分析接触弧长产生的过程，建立往复式线锯切割过程中接触弧长的数学模型，并对该过程中实验和仿真产生的误差进行了分析。以单颗磨粒的切深为基础，确定模型中的切削深度。仿真和实验结果表明，建立的模型可以较准确地预测不同工艺参数下的接触弧长。

关键词: 机械制造工艺与设备, SiC单晶, 材料去除, 建模, 预测

Abstract: Silicon carbide (SiC) is widely used in high-power devices and IC industry due to its good physical and mechanical properties. However, it is difficult to be processed (cutting, lapping and polishing) because of its high hardness and brittle. In the fixed diamond abrasive wire sawing of SiC monocrystal, the cutting force changes dynamically due to various factors. The effect of direct factor on cutting force is contact arc length between wire saw and workpiece. The moving processes of wire saw and worpiece are analyzed for the generation of contact arc length. A model of wire sawing process with reciprocating movement is established. The simulated and experimental errors are also discussed, and the cutting depth of model is determined based on the single abrasive scratch experiment. The simulation and experimental results show that the proposed model can predict the contact arc length in terms of different processing parameters.

Key words: manufacturing technology and equipment, SiC monocrystal, materials removal, modeling, prediction

中图分类号:

TG663

王嘉宾，李淑娟，梁列，汤奥斐，麻磊. SiC单晶切割过程中接触弧长建模与实验[J]. 兵工学报, 2016, 37(5): 879-887.

WANG Jia-bin， LI Shu-juan， LIANG Lie， TANG Ao-fei， MA Lei. Modeling and Experiment of Contact Arc Length in SiC Monocrystal Cutting[J]. Acta Armamentarii, 2016, 37(5): 879-887.

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SiC单晶切割过程中接触弧长建模与实验

Modeling and Experiment of Contact Arc Length in SiC Monocrystal Cutting

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