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兵工学报 ›› 2014, Vol. 35 ›› Issue (6): 789-794.doi: 10.3969/j.issn.1000-1093.2014.06.006

• 论文 • 上一篇    下一篇

降低半导体桥/斯蒂芬酸铅发火能量的技术途径研究

严楠1, 王刚1,2, 何爱军3, 鲍丙亮1   

  1. (1.北京理工大学 爆炸科学与技术国家重点实验室, 北京 100081;2.中国航天科工集团 8511研究所, 江苏 南京 210007;3.中国兵器工业规划研究院, 北京 100053)
  • 收稿日期:2013-08-15 修回日期:2013-08-15 上线日期:2014-07-24
  • 通讯作者: 严楠 E-mail:yn@bit.edu.cn
  • 作者简介:严楠(1960—),男,教授,博士生导师
  • 基金资助:
    国家自然科学基金项目(1172042)

Experimental Research on Technical Approaches for Reducing Firing Energy of SCB/LTNR

YAN Nan1, WANG Gang1,2, HE Ai-jun3, BAO Bing-liang1   

  1. (1.State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China;2.No.8511 Research Institute, China Aerospace Science & Industry Corp., Nanjing 210007, Jiangsu, China;3.Planning and Research Institute of China Ordnance Industry, Beijing 100053, China)
  • Received:2013-08-15 Revised:2013-08-15 Online:2014-07-24
  • Contact: YAN Nan E-mail:yn@bit.edu.cn

摘要: 进一步降低半导体桥(SCB)换能元件发火能量是微机电系统(MEMS)引信用微型起爆系统发展的瓶颈技术。通过发火感度试验,获得了减小桥区尺寸、增加V型缺口、适当长宽比、降低药剂粒度等是降低SCB发火能量的有效技术途径。在试验方案范围内获得最小全发火电压3.83 V,发火能量0.073 mJ,最大不发火电流229.88 mA. 分析发火现象和电特性曲线得出:SCB换能元的桥区面积7.65×102 μm2,质量3.55×10-6 mg,临界发火属于电热发火;桥区面积5.68×102 μm2, 质量2.64×10-6 mg,临界发火属于电爆发火。进一步降低半导体桥(SCB)换能元件发火能量是微机电系统(MEMS)引信用微型起爆系统发展的瓶颈技术。通过发火感度试验,获得了减小桥区尺寸、增加V型缺口、适当长宽比、降低药剂粒度等是降低SCB发火能量的有效技术途径。在试验方案范围内获得最小全发火电压3.83 V,发火能量0.073 mJ,最大不发火电流229.88 mA. 分析发火现象和电特性曲线得出:SCB换能元的桥区面积7.65×102 μm2,质量3.55×10-6 mg,临界发火属于电热发火;桥区面积5.68×102 μm2, 质量2.64×10-6 mg,临界发火属于电爆发火。

关键词: 兵器科学与技术, 半导体桥, 发火电压, 发火机理, 电爆

Abstract: Further reduction in the firing energy of SCB/LTNR firing device has long been a bottleneck of micro initiation system in MEMS fuze.Technical approaches for reducing the firing energy of SCB firing device are obtained by testing the firing sensitivity, such as decrease in dimensions, proper aspect ratio, addition of V-notch angle, reduction in particle size of ignition composition, atc. In the experimental process, 3.83 V of the minimum all-firing voltage, 0.073 mJ of firing energy and 229.88 mA of the maximum no-firing current are achieved. Two ignition mechanisms can be found by analyzing firing phenomenon and electrical characteristics curve. One critical ignition mechanism is electrothermal ignition, of which corresponding bridge area of SCB transducer element is 7.65×102 μm2 and the mass is 3.55×10-6 mg. The other is electro-explosive ignition, of which corresponding area is 5.68×102 μm2 and the mass is 2.64×10-6 mg.

Key words: ordnance science and technology, semiconductor bridge, firing voltage, ignition mechanism, electro-explosive

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