活性破片高速撞击产生等离子体的毁伤效应

doi:10.12382/bgxb.2023.0048

摘要/Abstract

摘要：

为探究活性破片高速撞击产生等离子体特性及其对目标造成的电磁毁伤效应,开展了活性破片高速撞击铝板的毁伤试验。采用不同配方活性材料破片和普通铝制破片分别撞击铝板,通过朗缪尔三探针系统获得活性和惰性破片在特定空间位置产生等离子体的电子密度和电子温度,通过逻辑芯片信号采集系统获得74HC04逻辑芯片在等离子体作用下的电磁毁伤效应。研究结果表明:由于活性破片独特的侵爆效应,释放出更多的能量,使得产生的等离子体电子密度比惰性破片更高;配方为钽\镁\四氟乙烯-六氟丙烯-偏氟乙烯共聚物(Ta/Mg/THV,70%Ta+9.26%Mg+20.74%THV)的活性破片以1.4km/s的速度撞击厚度为2mm的双层铝板时,产生的等离子体电子密度能达到5.89×10¹⁵m^-3,对74HC04逻辑芯片造成了逻辑关系短暂失真的瞬态软毁伤和逻辑工作能力完全失效的不可逆毁伤。

关键词: 活性破片, 高速碰撞, 等离子体, 逻辑芯片, 电磁毁伤

Abstract:

The damage test of reactive fragments hitting aluminum plate at high speed is carried out to investigate the plasma characteristics and the electromagnetic damage effect on target caused by high-speed impact of reactive fragments. The reactive material fragments of different formulas and ordinary aluminum fragment are used to impact the aluminum plate. The electron density and temperature of plasma generated from thereactive and inert fragments at specific spatial location were obtained by usingatriple Langmuir probe system. The electromagnetic damage effect of 74HC04 logic chip under the action of plasma was obtained by usinga logic chip signal-acquisition system. The results show that the plasma electron density produced by the reactive fragments is higher than that produced by the inert fragments due to the unique penetration effect of the reactive fragments and the release of more energy. When the reactive fragment containingtantalum/magnesium/tetrafluoroethylene-hexafluoropropylene-vinylidene fluoride copolymer(Ta/Mg/THV,70%Ta+9.26%Mg+20.74%THV) impact the double aluminum plates with 2mm thickness at the speed of 1.4km/s, the plasma electron density can reach 5.89×10¹⁵m^-3, andit also causes thetransient soft damage with transient distortion of logic relation and theirreversible damage with complete failure of logic working ability to the 74HC04 logic-chip.

Key words: reactive fragment, high speed impact, plasma, logic chip, electromagnetic damage

中图分类号:

TJ55
O383.3

徐瑞泽, 肖建光, 马俊杨, 安德隆, 谢志渊, 王岩鑫. 活性破片高速撞击产生等离子体的毁伤效应[J]. 兵工学报, 2023, 44(12): 3733-3742.

XU Ruize, XIAO Jianguang, MA Junyang, AN Delong, XIE Zhiyuan, WANG Yanxin. Damage Effect of Plasma Produced by High-velocity Impact of Reactive Fragments[J]. Acta Armamentarii, 2023, 44(12): 3733-3742.

图/表 13

图1 活性破片试件

Fig.1 Reactive fragment test piece

图2 试验总体方案

Fig.2 Layout diagram of overall testscheme

图3 朗缪尔三探针系统

Fig.3 Triple Langmuir probe system

图4 74HC04芯片引脚图

Fig.4 74HC04 chip pin diagram

图5 Hf/THV活性破片高速撞击铝板

Fig.5 Hf/THV Fragment impacting analuminum plate at high speed

图6 靶板物理毁伤

Fig.6 Physical damage of target

表1 三探针及逻辑芯片安装位置

Table 1 Installation position of triple probe and logic chip

破片配方	三探针安装位置/cm			逻辑芯片安装位置/cm
破片配方	x	y	z	x	y
Ta/Mg/THV	-1.2	1.2	1.6	-0.3	4.0
Hf/THV	-0.9	0.8	1.8
Al	-1.8	0	3.4

图7 等离子体电子密度随温度的变化关系

Fig.7 Relationship between plasma electron density and temperature

图8 等离子体电子密度和电子温度

Fig.8 Plasma electron density and electron temperature

图9 Al破片高速撞击铝靶电子密度随空间距离变化

Fig.9 Variation of electron density of Al fragment impacting aluminum target at high speed with space distance

图10 74HC04逻辑芯片输入和输出信号

Fig.10 Input and output signals of 74HC04 logic chip

图11 Ta/Mg/THV活性破片对逻辑芯片的物理毁伤

Fig.11 Physical damage to logic chip by Ta/Mg/THV fragment

图12 电磁脉冲下CMOS逻辑芯片中PMOS干扰机理

Fig.12 PMOS interference mechanism in CMOS logic chip under EMP

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