A Design Method of Vibration Accelerated Excitation Based on Feedback Approximate Damage

doi:10.12382/bgxb.2024.0138

Abstract

Abstract:

The method for formulating the high-acceleration profiles for electromechanical products has some problems,such as unclear correlation between key element of profile and excitation failure mechanism,low fault excitation efficiency,and high testing costs.To establish a correlation mechanism between the cumulative damage and the key elements of vibration test profile,a vibration acceleration excitation design method based on feedback approximate damage is proposed.The refined design of vibration test profile is achieved through the dynamic control of damage increment.By integrating the analysis of vibration damage mechanism and the frequency-domain analytical technology of power spectral density,the mapping relationship between vibration excitation and cumulative damage is quantified,and a vibration excitation-damage corresponding model (CM-VED) is established.The validity of the proposed method is verified by taking the high-acceleration step vibration test of a fuse as an example.The research findings indicate that the obtained high-acceleration vibration test profile enhances the excitation accuracy of failure limit by 60% compared with the standard fixed-step method,and the time is shortened by 33.33% compared with that of the equal division method while ensuring high excitation accuracy.The proposed CM-VED can provide a theoretical basis for establishing the correspondence between excitation and damage.The proposed vibration acceleration excitation design method based on feedback approximate damage can reduce the test cost while guaranteeing the excitation accuracy,providing technical support for the design of the high-acceleration vibration test profile of electromechanical products.

Key words: high-acceleration test, approximate damage, vibration excitation, profile design, quantitative mapping

CLC Number:

TJ301

FENG Yunwen, YANG Rongji, XUE Xiaofeng, LIU Jiaqi, GAO Tao. A Design Method of Vibration Accelerated Excitation Based on Feedback Approximate Damage[J]. Acta Armamentarii, 2025, 46(2): 240138-.

Figures/Tables 38

References 36

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符号	名称	含义
	或门	输入端只要有一个事件出现时即有输出
	基本事件	导致顶事件发生的最基本的或不能再向下分析的原因,是底事件的一种
	结果事件	由其他事件或事件组合导致的事件,分为顶事件和中间事件

符号	名称	含义
	或门	输入端只要有一个事件出现时即有输出
	基本事件	导致顶事件发生的最基本的或不能再向下分析的原因,是底事件的一种
	结果事件	由其他事件或事件组合导致的事件,分为顶事件和中间事件

振动载荷/ Grms	元器件最大等效应力值/MPa			各级载荷下的损伤
振动载荷/ Grms	1σ	2σ	3σ	各级载荷下的损伤
5	20.3	40.6	60.9	1.059×10^-4
8	32.6	65.2	97.8	1.799×10^-3
11	44.8	89.6	134.4	0.0120
14	56.9	113.8	170.7	0.0503
17	69.2	138.4	207.6	0.1620
20	81.5	163.0	244.5	0.4310
21	85.5	171.0	256.5	0.5740
22	89.6	179.2	268.8	0.7600

振动载荷/ Grms	元器件最大等效应力值/MPa			各级载荷下的损伤
振动载荷/ Grms	1σ	2σ	3σ	各级载荷下的损伤
5	20.3	40.6	60.9	1.059×10^-4
8	32.6	65.2	97.8	1.799×10^-3
11	44.8	89.6	134.4	0.0120
14	56.9	113.8	170.7	0.0503
17	69.2	138.4	207.6	0.1620
20	81.5	163.0	244.5	0.4310
21	85.5	171.0	256.5	0.5740
22	89.6	179.2	268.8	0.7600

标号	元器件名称	标号	元器件名称
A	场控晶闸管(MOS Controlled Thyristor,MCT)	G	电压比较器b
B	金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)	H	二极管
C	电压比较器a	I	贴片电阻
D	A/D转换器	J	变压器
E	信号调理器	K	陶瓷电阻
F	升压芯片、降压芯片	L	三极管