Research on Polarization Discrimination Algorithm for Coherent Dual-source Angle Deception Interference

doi:10.3969/j.issn.1000-1093.2013.09.011

Abstract

Abstract:

The material removal mechanism in the lapping process of SiC monocrystal wafer is investigated, the size distribution of abrasive particles is described by using the statistical theory, and the equation of number of active abrasive particles in the lapping process is conducted. According to the deformations of wafer-particle and pad-particle interfaces, a novel model is developed for material removal rate (MRR) in the lapping process of SiC monocrystal wafers. The influences of pad hardness, pressure and particle size on MRR are analyzed based on the model. Compared with the theoretical model, the experiment results show that the model can predict the MRR more accurate than others in the lapping process of SiC monocrystal wafers, which provides a theoretical basis and foundation for predicting and controlling MRR in the lapping process of other monocrystal materials.

Key words: manufacturing processes and equipment, SiC monocrystal wafer, lapping process, material removal rate, modeling

CLC Number:

TH460. 25

HU Hai-ming, LI Shu-juan, GAO Xiao-chun, LI Yan. Research on Polarization Discrimination Algorithm for Coherent Dual-source Angle Deception Interference[J]. Acta Armamentarii, 2013, 34(9): 1125-1131.

References

[1] Preston F. The theory and design of plate glass polishing machines [J]. Journal of Society of Glass Technology, 1927, 11: 214 -256. [2] Chauhan R, Ahn Y, Chandrasekar S, et al. Role of indentation fracture in free abrasive machining of ceramics[J]. Wear: Part A,1993,162 -164A:246 -257. [3] Evansa C J, Paulb E, Dornfelds D, et al. Material removal mechanisms in lapping and polishing[J]. CIRP Annals-Manufacturing Technology, 2003,52(2):611 -633. [4] Luo J F, Dornfeld D A. Material removal regions in mechanical planarization for submicron in tegrated circuit fabrication coupling effects of slurry chemicals, abrasive size distribution and wafer-pad contact area[J]. Semiconductor Manufacturing, 2003,16(1):45-46. [5] Zhang F, Busnainab A A, Ahmadib G. Partide adhesion and removal in chemical mechanical polishing and post-CMP cleaning [J]. Journal of Electrochemical Society, 1999,146(7):2665 -2669. [6] Liu C W, Dai B T, Tseng W T, et al. Modeling of the wear mechanism during chemical-mechanical lapping[J]. Journal of Electrochemical Society, 1996, 143: 716 -721. [7] Johnson K L. Contact Mechanics [ M]. Cambridge: Cambridge University Press, 1985. [8] Greenwood J A, Williamson J B. Contact of nominally flat surfaces [J]. Proceedings of the Royal Society A, 1966, 295: 300 -319. [9] Xin J, Cai W, Tichy J A. A fundamental model proposed for material removal in chemical-mechanical polishing[J]. Wear, 2010,268(5 -6):837 -844. [10] 姜守振, 徐现刚,李娟. SiC 单晶生长及其晶片加工技术的进展[J]. 半导体学报, 2007, 28(5):810 -814. JIANG Shou-zhen,XU Xian-gang,LI Juan. Recent Progress in SiC Monocrystal Growth and Wafer Machining[J]. Chinese Journal of Semiconductors, 2007, 28(5):810 -814. (in Chinese) [11] 周忆,梁德沛. 超声研磨硬脆材料的去除模型研究[J]. 中国机械工程,2005,16(8):664 -666. ZHOU Yi,LIANG De-pei. Study on the theoretic model of ultrasonic lapping [ J]. China Mechanical Engineering, 2005, 16(8):664 -666. (in Chinese) [12] 庞滔,郭大春,庞楠. 超精密加工技术[M]. 北京:国防工业出版社,2000. PANG Tao, GUO Da-chun, PANG Nan. Ultra-precision machining technology[M]. Beijing: National Defense Industry Press,2000. (in Chinese)

[1]	DENG Hui, ZHANG Zhihong, YI Wenbin, WANG Erli. Modeling Method and Key Characteristics of Submarine Hydrodynamic Pressure Field in Bounded Flow Field [J]. Acta Armamentarii, 2024, 45(2): 527-540.
[2]	DING Yanchao, WANG Baoshou, WU Wenting, LIU Xinhui, TONG Xin. Modeling of Interior Trajectory of Water-driven Underwater Launch Device with Two-stage Piston [J]. Acta Armamentarii, 2024, 45(2): 594-605.
[3]	ZHANG Tianyi, ZHENG Ying, QIU Xinguo, JI Xingjian, JIN Xiaohang. Disturbance Compensation Strategy for Fifth-order Joint Servomechanism Based on Characteristic Model [J]. Acta Armamentarii, 2024, 45(1): 276-287.
[4]	ZHOU Yue, LI Zhuangzhuang, ZHENG Ranshun, LI Jun. Research on Safe Separation Mechanism of UAV Rocket Booster [J]. Acta Armamentarii, 2024, 45(1): 219-230.
[5]	SUN Hao, SUN Qinglin, SUN Mingwei, CHEN Zengqiang. Parafoil-based UAV Recovery System Under Random Initial Conditions [J]. Acta Armamentarii, 2023, 44(3): 718-727.
[6]	QIAO Yang, ZHAO Zhicheng, XIE Jing, CHEN Pengwan. In-plane Compressive Mechanical Behavior of SLM Titanium Alloy Honeycomb Structure [J]. Acta Armamentarii, 2023, 44(3): 629-637.
[7]	GUAN Haijie, WANG Boyang, WANG Xurui, LIU Hai’ou, CHEN Huiyan. A Review on the Development of Military Unmanned Ground System with Mission Payload [J]. Acta Armamentarii, 2023, 44(11): 3333-3344.
[8]	ZHANG Qi, GE Yuxue, LI Pan, KANG Qijun, PEI Yang. Evaluation Method for SoS Contribution Rate of All-optical UAV Swarm Based on ABMS [J]. Acta Armamentarii, 2023, 44(11): 3422-3435.
[9]	CHEN Jianwei, YU Chuanqiang, LIU Zhihao, TANG Shengjin, ZHANG Zhihao, SHU Hongbin. Data Modeling of Multi-Axle Special Vehicles and Lateral Dynamics Applications [J]. Acta Armamentarii, 2023, 44(1): 165-175.
[10]	SHUAI Zhibin, HE Shuai, LI Guohui, LI Yaoheng, LI Yong, ZHANG Ying, JIAN Hongchao. Modeling and Optimal Control of Low-Temperature Starting Process of Electro-Mechanical Transmission for Special Tracked Vehicles [J]. Acta Armamentarii, 2023, 44(1): 117-128.
[11]	YANG Zhanhua， LIU Chunsheng， LI Jun， GUO Shaopeng， LI Jianyang. Dynamic Modeling and Simulation of Airborne Vehicle's Landing Buffer Process [J]. Acta Armamentarii, 2022, 43(S1): 26-34.
[12]	SONG Yu， ZOU Ruping， WANG Jun. On the Practice of Model-based System Engineering in Missile Development [J]. Acta Armamentarii, 2022, 43(S1): 97-106.
[13]	LIU Zunfei， ZOU Bo， CHEN Xulin， ZHANG Wenjuan， YE Shuangping， PAN Jiangli. Architecture Modeling and Effectiveness Evaluation of Equipment System under Manned and Unmanned Joint Operation Mode [J]. Acta Armamentarii, 2022, 43(S1): 155-161.
[14]	SUN Chenfeng, L Weimin, CONG Linhu, XU Pengbo. Reliability Modelling of Hybrid Redundancy System Based on Generalized Stochastic Petri Nets [J]. Acta Armamentarii, 2022, 43(8): 2007-2016.
[15]	DONG Yongheng， LI Shujuan， ZHANG Qian， LI Pengyang， LI Qi， JIA Zhen， LI Yan. Modeling and Simulation of Surface Topography under Ball-end Milling Based on Dynamic Response of Milling System [J]. Acta Armamentarii, 2022, 43(8): 1977-1989.