Modeling and Experiment of Contact Arc Length in SiC Monocrystal Cutting

doi:10.3969/j.issn.1000-1093.2016.05.015

Abstract

Abstract: Silicon carbide (SiC) is widely used in high-power devices and IC industry due to its good physical and mechanical properties. However, it is difficult to be processed (cutting, lapping and polishing) because of its high hardness and brittle. In the fixed diamond abrasive wire sawing of SiC monocrystal, the cutting force changes dynamically due to various factors. The effect of direct factor on cutting force is contact arc length between wire saw and workpiece. The moving processes of wire saw and worpiece are analyzed for the generation of contact arc length. A model of wire sawing process with reciprocating movement is established. The simulated and experimental errors are also discussed, and the cutting depth of model is determined based on the single abrasive scratch experiment. The simulation and experimental results show that the proposed model can predict the contact arc length in terms of different processing parameters.

Key words: manufacturing technology and equipment, SiC monocrystal, materials removal, modeling, prediction

CLC Number:

TG663

WANG Jia-bin， LI Shu-juan， LIANG Lie， TANG Ao-fei， MA Lei. Modeling and Experiment of Contact Arc Length in SiC Monocrystal Cutting[J]. Acta Armamentarii, 2016, 37(5): 879-887.

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