Abstract: In order to improve the uniformity of the contact pressure distribution of chemical mechanical polishing (CMP) and the effects of chemical mechanical planarization, a new model of contact mechanism on CMP was set up based on the Winkler foundation model of elastic theory, and also a kind of method on cutting polishing pad was invented according as phyllotactic pattern of sunflower seed, and then the effects of cutting parameters on the contact pressure distribution of CMP were calculated and analyzed, lastly, the effects of the cutting parameters on the surface profiles of polished wafers were investigated by experiment. The research results show that the contact pressure distribution on polishing wafer surface becomes more uniform and its flatness errors become smaller when cutting parameters are from 0.008 mm to 0.009 mm in clockwise and from 0.005 mm to 0.006 mm in anticlockwise.

Key words: manufacture technique and equipment, polishing, silicon wafer, contact pressure distribution, pattern of sunflower seed, Winkler foundation