Damage Effect of Plasma Produced by High-velocity Impact of Reactive Fragments

doi:10.12382/bgxb.2023.0048

Abstract

Abstract:

The damage test of reactive fragments hitting aluminum plate at high speed is carried out to investigate the plasma characteristics and the electromagnetic damage effect on target caused by high-speed impact of reactive fragments. The reactive material fragments of different formulas and ordinary aluminum fragment are used to impact the aluminum plate. The electron density and temperature of plasma generated from thereactive and inert fragments at specific spatial location were obtained by usingatriple Langmuir probe system. The electromagnetic damage effect of 74HC04 logic chip under the action of plasma was obtained by usinga logic chip signal-acquisition system. The results show that the plasma electron density produced by the reactive fragments is higher than that produced by the inert fragments due to the unique penetration effect of the reactive fragments and the release of more energy. When the reactive fragment containingtantalum/magnesium/tetrafluoroethylene-hexafluoropropylene-vinylidene fluoride copolymer(Ta/Mg/THV,70%Ta+9.26%Mg+20.74%THV) impact the double aluminum plates with 2mm thickness at the speed of 1.4km/s, the plasma electron density can reach 5.89×10¹⁵m^-3, andit also causes thetransient soft damage with transient distortion of logic relation and theirreversible damage with complete failure of logic working ability to the 74HC04 logic-chip.

Key words: reactive fragment, high speed impact, plasma, logic chip, electromagnetic damage

CLC Number:

TJ55
O383.3

XU Ruize, XIAO Jianguang, MA Junyang, AN Delong, XIE Zhiyuan, WANG Yanxin. Damage Effect of Plasma Produced by High-velocity Impact of Reactive Fragments[J]. Acta Armamentarii, 2023, 44(12): 3733-3742.

Figures/Tables 13

Fig.1 Reactive fragment test piece

Fig.2 Layout diagram of overall testscheme

Fig.3 Triple Langmuir probe system

Fig.4 74HC04 chip pin diagram

Fig.5 Hf/THV Fragment impacting analuminum plate at high speed

Fig.6 Physical damage of target

Table 1 Installation position of triple probe and logic chip

破片配方	三探针安装位置/cm			逻辑芯片安装位置/cm
破片配方	x	y	z	x	y
Ta/Mg/THV	-1.2	1.2	1.6	-0.3	4.0
Hf/THV	-0.9	0.8	1.8
Al	-1.8	0	3.4

Fig.7 Relationship between plasma electron density and temperature

Fig.8 Plasma electron density and electron temperature

Fig.9 Variation of electron density of Al fragment impacting aluminum target at high speed with space distance

Fig.10 Input and output signals of 74HC04 logic chip

Fig.11 Physical damage to logic chip by Ta/Mg/THV fragment

Fig.12 PMOS interference mechanism in CMOS logic chip under EMP

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