Damage Effect of Strong Electromagnetic Pulse on Micro-silicon Inertial Sensor

doi:10.3969/j.issn.1000-1093.2020.06.012

Abstract

Abstract: In order to study the damage effect of strong electromagnetic pulse on the micro-silicon inertial sensor of exoskeleton robotic system, the electromagnetic damage threshold, vulnerable devices and damage modes of micro-silicon inertial sensor are studied through theoretical calculation and experimental analysis. The strong electric pulse coupled and transmitted to the signal transmission ports by cables which are directly connected to sensor in electromagnetic pulse environment is calculated by using Agrawal transmission line theory and Green's function. And the strong electric pulse injection experiment of signal transmission ports and the damage mode analysis of sensor are carried out. The result shows that the damage threshold of micro-silicon inertial sensor is 780 V, the electromagnetic vulnerable components are front-end capacitor and signal amplifiers, and the main damage modes are high voltage breakdown of capacitor and high current burnout of amplifiers. Key

Key words: electromagneticpulse, micro-inertialsensor, injectionexperiment, damagemode

CLC Number:

SHEN Jie， PAN Xuchao， FANG Zhong， HE Yong， CHEN Hong， ZHANG Jiangnan， SHI Yunlei. Damage Effect of Strong Electromagnetic Pulse on Micro-silicon Inertial Sensor[J]. Acta Armamentarii, 2020, 41(6): 1157-1164.

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第41卷第6期2020 年6月
兵工学报ACTA ARMAMENTARII
Vol.41No.6Jun.2020

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