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Acta Armamentarii ›› 2017, Vol. 38 ›› Issue (8): 1490-1497.doi: 10.3969/j.issn.1000-1093.2017.08.005

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Effects of Step Recovery Diode Parameters on Narrow Pulse Waveform

LI Meng1, HUANG Zhong-hua2, SHEN Lei3   

  1. (1.Beijing Institute of Nearspace Vehicle's System Engineering, Beijing 100076,China;2.School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China;3.Key Laboratory of Aerospace System Simulation, Beijing Simulation Center, Beijing 100854, China)
  • Received:2016-07-28 Revised:2016-07-28 Online:2017-10-10

Abstract: Step recovery diode (SRD) is the kernel of ultra-wideband (UWB) fuze generating a narrow pulse signal, and the parameters of SRD can affect the amplitude and width of narrow pulse signal. A SRD model is established based on the semiconductor device theory and SRD operating states, and the effects of SRD parameters on forward bias admittance and reverse bias barrier capacitance are studied. According to narrow pulse generating equivalent circuit, a circuit transient analysis method is used to solve the expression of narrow pulse amplitude and width. The relationships among SRD minority carrier lifetime, reverse saturation current, bias junction capacitance, doping distribution coefficient, narrow pulse amplitude and pulse width are studied through simulation. The simulated results show that the amplitude and pulse width of narrow pulse can be adjusted by changing SRD parameters. The correctness of simulated results is verified by comparing with the generated narrow pulse. Key

Key words: ordnancescienceandtechnology, UWBfuze, steprecoverydiode, narrowpulse, minoritycarrierlifetime, zerobiasjunctioncapacitance

CLC Number: