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Acta Armamentarii ›› 2015, Vol. 36 ›› Issue (11): 2185-2189.doi: 10.3969/j.issn.1000-1093.2015.11.025

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The Structural Dynamic Response of Projectile-borne Optoelectronic Devices during Launching

NING Quan-li1, JIANG Bin-an1, LIANG Xi2, LI Jun1,3   

  1. (1.Laboratory of Guidance Control and Information Perception Technology of High Overload Projectiles,Army Officer Academy of PLA, Hefei 230031, Anhui, China; 2. College of Civil Engineering & Mechanics, Yanshan University, Qinhuangdao 066004, Hebei, China; 3. Department 2, Army Officer Academy of PLA, Hefei 230031, Anhui, China)
  • Received:2015-01-18 Revised:2015-01-18 Online:2016-02-02
  • Contact: NING Quan-li E-mail:522736949@qq.com

Abstract: In order to study the anti-high-overload mechanism of projectile-borne optoelectronic devices, a numerical simulation model of projectile-borne opto- electronic devices is established according to the artillery launching environmental characteristics. A theoretical analysis model of projectile-borne optoelectronic devices is also established to solve the stress, strain and relative velocity of projectile-borne opto-electronic devices. The result shows that the numerically calculated results are in good agreement with the simulated results to verify the correctness of the theoretical analysis model. The proposed model can be used for the reseasch on the dynamic characteristics of the projectile-borne devicess and the theoretical analysis of anti-high-overload design.

Key words: ordnance science and technology, projectile-borne optoelectronic device, numerical simulation, stress wave, artillery launching

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