Abstract: For the laser light source with the highpower and narrowpulse, the simple method of the extract parameters of equivalent circuit model was proposed, base on measuring external characteristic，which to solve the problem of the extraction for the equivalent circuit of the laser multichip array structure. The basic features are as follows: without the data of the internal structure and the materials of the semiconductor，measuring the electrical parameters of the real circuit system and using Pspice simulation software to gain multiple sets of data for fitting equivalent circuit parameters of the semiconductor laser. The results are consistent with that given by the foreign products.It provides a foundation for the driver source design of the laser diode with highpower and narrowpulse, and has the guiding significance for the combination,the array structure planing and assembly process of the multichip. On this basis, the driver source circuit experiment system of the semiconductor lasers onboard structure was designed and manufactured, the output power of 180 W, the rise time of the light pulse of 3.2 ns was obtained and the corresponding pulse width was 8.3 ns.

Key words: optoelectronics and laser, narrowpulse laser light source, equivalent circuit, parameter extraction, multichip array