Comprehensive Proton Irradiation and Electric Field Testing System and Method for GaN Devices

doi:10.12382/bgxb.2022.1115

Abstract

Abstract:

Based on the proton irradiation damage mechanism and degradation characteristics of GaN devices, and according to the equivalent fitting principle of dose depth distribution, a comprehensive multi-energy proton irradiation testing method equivalent to the proton irradiation environment in geosynchronous orbit is proposed. The charging potential of circuit board materials is calculated for the problem of internal charging in space, and the simulation method and device for electrostatic field and transient electric field used for the simulation of internal charging effect are designed. A comprehensive proton irradiation and electric field testing system is established and preliminary tests are carried out. The test results showed that: the gate source voltage at peak transconductance of GaN devices shifts with the proton fluence. Compared with proton irradiation alone, the characteristic parameters of devices under the combined action of proton and electric field change faster and more significantly, which proves the effectiveness of the proposed testing method and system.

Key words: GaN device, proton irradiation, electric field, comprehensive test

JI Qizheng, LIU Shanghe, WANG Zhihao, YANG Ming, DING Yigang, WANGSizhan, SHEN Zicai, LIU Yuming. Comprehensive Proton Irradiation and Electric Field Testing System and Method for GaN Devices[J]. Acta Armamentarii, 2023, 44(6): 1704-1712.

Figures/Tables 15

References 38

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能量/10^-1MeV	微分通量/(cm^-2·s·MeV)
1.00	4.080296×10⁷
2.50	3.902650×10⁶
5.00	3.347048×10⁵
7.50	4.163439×10⁴
10.00	4.308287×10³
20.00	0

能量/10^-1MeV	微分通量/(cm^-2·s·MeV)
1.00	4.080296×10⁷
2.50	3.902650×10⁶
5.00	3.347048×10⁵
7.50	4.163439×10⁴
10.00	4.308287×10³
20.00	0

能量/MeV	微分注量/(cm^-2·MeV)
5.00×10^-1	4.4255×10¹¹
6.00×10^-1	3.1354×10¹¹
8.00×10^-1	1.7130×10¹¹
1.00	1.0927×10¹¹
2.00	2.6472×10¹⁰
4.00	5.7099×10⁹
1.00×10¹	8.9197×10⁸
2.00×10¹	1.9025×10⁸
4.50×10¹	2.7696×10⁷
1.00×10²	4.2917×10⁶

能量/MeV	微分注量/(cm^-2·MeV)
5.00×10^-1	4.4255×10¹¹
6.00×10^-1	3.1354×10¹¹
8.00×10^-1	1.7130×10¹¹
1.00	1.0927×10¹¹
2.00	2.6472×10¹⁰
4.00	5.7099×10⁹
1.00×10¹	8.9197×10⁸
2.00×10¹	1.9025×10⁸
4.50×10¹	2.7696×10⁷
1.00×10²	4.2917×10⁶

序号	试验项目	参数
		50keV质子,注量2.0×10¹³cm^-2
1	质子辐照试验	140keV质子,注量3.24×10¹⁴cm^-2
		400keV质子,注量6.0×10¹³cm^-2
2	电场试验	电极电压值-1kV,-10kV,-20kV