GaN器件质子辐照与电场综合试验系统及方法

doi:10.12382/bgxb.2022.1115

摘要/Abstract

摘要：

基于GaN器件质子辐照损伤机制和退化特性,根据剂量深度分布等效拟合原理,提出与地球同步轨道质子辐照环境等效的多能质子综合辐照试验方法。针对空间内带电问题计算电路板材料的充电电位,设计用于内带电效应模拟的静电场和瞬态电场的模拟方法及装置。建立质子辐照与电场综合试验系统并开展初步的试验。研究结果表明:GaN器件在跨导峰值处的栅源电压随质子注量发生偏移;相对于单独质子辐照,质子和电场综合作用下器件特征参数变化速度更快,幅度更大,证明了所提试验方法及系统的有效性。

关键词: GaN器件, 质子辐照, 电场, 综合试验

Abstract:

Based on the proton irradiation damage mechanism and degradation characteristics of GaN devices, and according to the equivalent fitting principle of dose depth distribution, a comprehensive multi-energy proton irradiation testing method equivalent to the proton irradiation environment in geosynchronous orbit is proposed. The charging potential of circuit board materials is calculated for the problem of internal charging in space, and the simulation method and device for electrostatic field and transient electric field used for the simulation of internal charging effect are designed. A comprehensive proton irradiation and electric field testing system is established and preliminary tests are carried out. The test results showed that: the gate source voltage at peak transconductance of GaN devices shifts with the proton fluence. Compared with proton irradiation alone, the characteristic parameters of devices under the combined action of proton and electric field change faster and more significantly, which proves the effectiveness of the proposed testing method and system.

Key words: GaN device, proton irradiation, electric field, comprehensive test

季启政, 刘尚合, 王志浩, 杨铭, 丁义刚, 王思展, 沈自才, 刘宇明. GaN器件质子辐照与电场综合试验系统及方法[J]. 兵工学报, 2023, 44(6): 1704-1712.

JI Qizheng, LIU Shanghe, WANG Zhihao, YANG Ming, DING Yigang, WANGSizhan, SHEN Zicai, LIU Yuming. Comprehensive Proton Irradiation and Electric Field Testing System and Method for GaN Devices[J]. Acta Armamentarii, 2023, 44(6): 1704-1712.

图/表 15

表1 GEO辐射带质子微分能谱

Table 1 Proton differential energy spectrum of radiation beltin GEO

能量/10^-1MeV	微分通量/(cm^-2·s·MeV)
1.00	4.080296×10⁷
2.50	3.902650×10⁶
5.00	3.347048×10⁵
7.50	4.163439×10⁴
10.00	4.308287×10³
20.00	0

表2 太阳质子微分注量谱

Table 2 Solar proton differential fluence spectrum

能量/MeV	微分注量/(cm^-2·MeV)
5.00×10^-1	4.4255×10¹¹
6.00×10^-1	3.1354×10¹¹
8.00×10^-1	1.7130×10¹¹
1.00	1.0927×10¹¹
2.00	2.6472×10¹⁰
4.00	5.7099×10⁹
1.00×10¹	8.9197×10⁸
2.00×10¹	1.9025×10⁸
4.50×10¹	2.7696×10⁷
1.00×10²	4.2917×10⁶

图1 GaN器件剖面示意图

Fig.1 Sectional diagram of GaN device

图2 GEO轨道质子吸收剂量深度对比(1a)

Fig.2 Absorbed dose depth comparison of proton in GEO (1a)

图3 FLUMIC电子能谱

Fig.3 FLUMIC electron spectroscopy

图4 仿真计算得到的PCB电位分布

Fig.4 PCB potential distribution obtained by simulation and calculation

图5 电场模拟及测试示意图

Fig.5 Diagram of electric field simulation and testing

表3 试验参数

Table 3 Test parameters

序号	试验项目	参数
		50keV质子,注量2.0×10¹³cm^-2
1	质子辐照试验	140keV质子,注量3.24×10¹⁴cm^-2
		400keV质子,注量6.0×10¹³cm^-2
2	电场试验	电极电压值-1kV,-10kV,-20kV

表4 试验项目及参数

Table 4 Test items and parameters

阶段	试验项目	质子能量/keV	质子注量/cm^-2	电极电压值/kV	放电特性指标
1	质子+电场辐照试验	50	2.0×10¹³	-1,-10,-20^a
	质子辐照试验	50	2.0×10¹³
2	质子+电场辐照试验	140	3.24×10¹⁴	-1,-10,-20^b
	质子辐照试验	140	3.24×10¹⁴
3	质子+电场辐照试验	400	6.0×10¹³	-1,-10,-20^b
	质子辐照试验	400	6.0×10¹³
4	瞬态电场干扰试验				电压:1~10kV 电流:0.2~10A 上升时间:<30ns 脉宽:60~100ns

图6 ϕ800mm综合辐照试验系统

Fig.6 ϕ800mm comprehensive irradiation testing system

表5 ϕ800mm综合辐照试验系统参数指标

Table 5 Parameters and indexes of ϕ800mm comprehensive irradiation testing system

参数	质子能量/ keV	通量/ (cm^-2·s)	辐照面积/mm	均匀性
数值	10~50	1×10⁹~1×10¹⁰	ϕ150	优于10%

图7 真空容器内高压电极布置示意图

Fig.7 Diagram of high-voltage electrode in vacuum vessel

图8 GaN器件及电极装置在试验容器中照片

Fig.8 Photo of GaN devices and electrode in the test vessel

图9 器件转移特性曲线

Fig.9 Device transfer characteristic curves

图10 器件1、2和3的跨导峰值对应的VGS随时间变化

Fig.10 Change of VGS corresponding to peak transconductance of Device 1, 2 and 3 with time

参考文献 38

[1]	郭超, 杨飞, 李霄枭, 等. 基于谐波调谐技术的功率放大器研究[J]. 空间电子技术, 2021, 18(1):47-50.
	GUO C, YANG F, LI X X, et al. Research on power amplifier based on harmonic tuning technology[J]. Space Electronic Technology, 2021, 18(1):47-50. (in Chinese)
[2]	敬小东, 王海龙, 游飞, 等. 星载大功率GaN固态功放寿命评估方法[J]. 航天器环境工程, 2021, 38(4):420-425.
	JING X D, WANG H L, YOU F, et al. Method for life evaluation of spaceborne high power GaN solid state powe ramplifier[J]. Spacecraft Environment Engineering, 2021, 38(4):420-425. (in Chinese)
[3]	沈自才. 空间辐射环境工程[M]. 北京: 中国宇航出版社, 2009.
	SHEN Z C. Space radiation environmental engineering[M]. Beijing: China Aerospace Press, 2009. (in Chinese)
[4]	季启政, 刘峻, 杨铭, 等. AlGaN/GaNHEMT质子辐射效应研究进展[J]. 航天器环境工程, 2022, 39(4):436-445.
	JI Q Z, LIU J, YANG M, et al. Review of proton irradiation effect to AlGaN/GaN HEMT[J]. Spacecraft Environment Engineering, 2022, 39(4):436-445. (in Chinese)
[5]	ISLAM Z, PAOLETTA A L, MONTERROSA A M, et al. Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state[J]. Microelectronics Reliability, 2019, 102:113493. doi: 10.1016/j.microrel.2019.113493 URL
[6]	KIM H Y, KIM J, LIU L, et al. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors[J]. Journal of Vacuum Science & Technology B, 2012, 30(1):012202.
[7]	KIM D S, LEE J H, YEO S, et al. Proton irradiation effects on AlGaN/GaN HEMTs with different isolation methods[J]. IEEE Transactions on Nuclear Science, 2018, 65(1):579-582. doi: 10.1109/TNS.2017.2780273 URL
[8]	谷文萍. AlGaN/GaN HEMT器件的辐照效应研究[D]. 西安: 西安电子科技大学, 2009.
	GU W P. Study on irradiation effects of AlGaN/GaN HEMT devices[D]. Xi’an: Xi’an University of Electronic Science and Technology, 2009. (in Chinese)
[9]	HU X, BO K C, BARNABY H J, et al. The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors[J]. IEEE Transactions on Nuclear Science, 2004, 51(2):293-297. doi: 10.1109/TNS.2004.825077 URL
[10]	SONIA G, RICHTER E, LOSSY R, et al. High and low energy proton irradiation effects on AlGaN/GaN HFETs[J]. Physica Status Solidi C: Conferences and Critical Reviews, 2006, 3(6):2338-2341.
[11]	KEUM D, KIM H. Energy-dependent degradation characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2MeV proton irradiation[J]. ECS Journal of Solid State Science & Technology, 2018, 7(9):159-163.
[12]	吕玲, 林正兆, 郭红霞, 等. 增强型AlGaN/Ga N MIS-HEMTs器件的质子辐照效应[J]. 现代应用物理, 2021, 12(2):86-92.
	LÜ L, LIN Z Z, GUO H X, et al. Effects of proton irradiation on enhancement-mode AlGaN/GaN MIS-HEMTs[J]. Modern Applied Physics, 2021, 12(2):86-92. (in Chinese)
[13]	GAUDREAU F, FOURNIER P, CARLONE C, et al. Transport properties of proton-irradiated gallium nitride based two-dimensional electron-gas system[J]. IEEE Transactions on Nuclear Science, 2002, 49(6):2702-2707. doi: 10.1109/TNS.23 URL
[14]	HU X, KARMARKAR A P, JUN B, et al. Proton irradiation effects on AlGaN/AlN/GaN high electron mobility transistors[J]. IEEE Transactions on Nuclear Science, 2003, 50(6):1791-1796. doi: 10.1109/TNS.23 URL
[15]	WHITE B D, BATAIEV M, GOSS S H, et al. Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence[J]. IEEE Transactions on Nuclear Science, 2003, 50(6):1934-1941. doi: 10.1109/TNS.23 URL
[16]	KARMARKAR A P, JUN B, FLEETWOOD D M, et al. Proton irradiation effectson GaN-based high electron mobility transistors with Si-doped Al_xGa_1-_xN and thick GaN cap layers[J]. IEEE Transactions on Nuclear Science, 2004, 51(6):3801-3806. doi: 10.1109/TNS.2004.839199 URL
[17]	KIM H Y, KIM J, YUN S P, et al. AlGaN/GaN high electron mobility transistors irradiated with 17MeV protons[J]. Journal of the Electrochemical Society, 2008, 155(7):513-515.
[18]	严肖瑶. AlGaN/GaNHEMT器件辐射缺陷研究[D]. 西安: 西安电子科技大学, 2020:14-35.
	YAN X Y. Study on radiation defects of AlGaN/GaN HEMT devices[D]. Xi’an: Xi’an University of Electronic Science and Technology, 2020:14-35. (in Chinese)
[19]	Mitigating in-space charging effects-a guideline: NASA-HDBK-4002B[S]. Huntsville, AL, US: NASA, 2022.
[20]	李宏伟, 韩建伟, 蔡明辉, 等. 卫星充放电效应对典型星载电子设备影响的实验研究[J]. 航天器环境工程, 2021, 38(3):370-374.
	LI H W, HAN J W, CAI M H, et al. Experimental study of the effects of spacecraft charging and discharging on typical satellite-borne electric instrument[J]. Spacecraft Environment Engineering, 2021, 38(3):370-374. (in Chinese)
[21]	韩建伟, 张振龙, 黄建国, 等. 卫星介质深层充放电模拟实验装置研制进展[J]. 航天器环境工程, 2007, 24(1):47-50.
	HAN J W, ZHANG Z L, HUANG J G, et al. An environmental simulation facility for study of deep dielectric charging on satellites[J]. Spacecraft Environment Engineering, 2007, 24(1):47-50. (in Chinese)
[22]	RAO H, BOSMAN G. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors[J]. Solid State Electronics, 2013, 79:11-13. doi: 10.1016/j.sse.2012.06.014 URL
[23]	SOZZA A, DUA C, MORVAN E, et al. Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress[C]//Proceedings of IEEE International Electron Devices Meeting, IEDM Technical Digest. Washington, DC,US:IEEE, 2005:590-593.
[24]	MENEGHESSO G, PIEROBON R, RAMPAZZO F, et al. Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC[C]//Proceedings of 2005 IEEE Reliability Physics Symposium. SanJose, CA,US:IEEE, 2005:415-422.
[25]	MENEGHINI M, STOCCO A, SILVESTRI R, et al. Impact of hot electrons on the reliability of AlGaN/GaN high electron mobility transistors[C]//Proceedings of 2012 IEEE International Reliability Physics Symposium. Anaheim, CA,US:IEEE, 2012:2C.2.1-2C.2.5.
[26]	JOH J, ALAMO J. Mechanisms for electrical degradation of GaN high-electron mobility transistors[C]//Proceedings of 2006 International Electron Devices Meeting. San Francisco, CA,US:IEEE, 2006:1-4.
[27]	JOH J, GAO F, PALACIOS T, et al. A model for the critical voltage for electrical degradation of GaN high electron mobility transistors[J]. Microelectronics Reliability, 2010, 50(6):767-773. doi: 10.1016/j.microrel.2010.02.015 URL
[28]	CHOWDHURY U, JIMENEZ J L, LEE C, et al. TEM observation of crack-and pit-shaped defects in electrically degraded GaN HEMTs[J]. IEEE Electron Device Letters, 2008, 29(10):1098-1100. doi: 10.1109/LED.2008.2003073 URL
[29]	MENEGHINI M, STOCCO A, BERLIN M, et al. Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias[J]. Applied Physics Letters, 2012, 100(3):287-293.
[30]	ZANONI E, MENEGHINI M, CHINI A, et al. AlGaN/GaN-based HEMTs failure physics and reliability: mechanisms affecting gat eedge and Schottky junction[J]. IEEE Transactions on Electron Devices, 2013, 60(10):3119-3131. doi: 10.1109/TED.2013.2271954 URL
[31]	POLGREEN T L, CHATTERJEE A. Improving the ESD failure threshold of silicided NMOS output transistors by ensuring uniform current flow[J]. IEEE Transactions on Electron Devices, 1992, 39(2):379-388. doi: 10.1109/16.121697 URL
[32]	ROSSETTO I, MENEGHINI M, BARBATO M, et al. Demonstration of field-and power-dependent ESD Failure in AlGaN/GaNRF HEMTs[J]. IEEE Transactions on Electron Devices, 2015, 62(9):2830-2836. doi: 10.1109/TED.2015.2463713 URL
[33]	KUZMIK J, POGANY D, GORNIK E, et al. Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors[J]. Applied Physics Letters, 2003, 83(22):4655-4657. doi: 10.1063/1.1633018 URL
[34]	SHANKAR B, SONI A, SINGH M, et al. ESD behavior of AlGaN/GaN HEMT on Si: physical insights, design aspects, cumulative degradation and failure analysis[C]//Proceedings of International Conference on VlSI Design & International Conference on Embedded Systems. Hyderabad,India:IEEE, 2017:361-365.
[35]	SHANKAR B, RAGHAVAN S, SHRIVASTAVA M. ESD reliability of AlGaN/GaNHEMT technology[J]. IEEE Transactions on Electron Devices, 2019, 66(99):3756-3763. doi: 10.1109/TED.16 URL
[36]	TAZZOLI A, DANESIN F, ZANONI E, et al. ESD robustness of AlGaN/GaN HEMT devices[C]//Proceedings of 2007 29th Electrical Overstress/Electrostatic Discharge Symposium. Anaheim, CA,US:IEEE, 2007:264-272.
[37]	何江. AlGaN/GaNHEMT器件电学特性与可靠性研究[D]. 湘潭: 湘潭大学, 2019.
	HE J. Study on electrical characteristics and reliability of AlGaN/GaN HEMT devices[D]. Xiangtan: Xiangtan University, 2019. (in Chinese)
[38]	张岩, 赵鑫, 刘尚合, 等. 静电电磁脉冲诱发航天器绝缘材料闪络特性[J]. 兵工学报, 2022, 43(8):1956-1965. doi: 10.12382/bgxb.2021.0396
	ZHANG Y, ZHAO X, LIU S H, et al. Flashover characteri sticso finsulation materials of spacecraftin duced by ESDEMP[J]. Acta Armamentarii, 2022, 43(8):1956-1965. (in Chinese)