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Acta Armamentarii ›› 2019, Vol. 40 ›› Issue (12): 2482-2487.doi: 10.3969/j.issn.1000-1093.2019.12.012

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Influence of Cavity Mode on Lasing Wavelength of VCSEL

LIANG Jing1,2, JIA Huimin1, SU Ruigong2, TANG Jilong1, FANG Dan1, FENG Haitong2, ZHANG Baoshun2, WEI Zhipeng1   

  1. (1.State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, Jilin, China;2.Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China)
  • Received:2018-12-25 Revised:2018-12-25 Online:2020-02-14

Abstract: The chips of vertical cavity surface emitting laser (VCSEL) with different positions of cavity mode were designed and prepared for 894.6 nm VCSEL with wavelength-stabilized output in high temperature environment. The influence of cavity mode position on lasing wavelength is studied by testing and analyzing the cavity mode position, output wavelength and temperature drift coefficient of VCSEL. It is found that the lasing wavelength of VCSEL has a linear relation with cavity mode. A structure of VCSEL with cavity mode at 890.5 nm was designed. VCSEL chips which output wavelength is 894.6 nm in 85 ℃ high temperature environment were prepared. The results show that the desired output wavelength of VCSEL chips can be obtained by controlling the position of cavity mode. Key

Key words: verticalcavitysurfaceemittinglaser, cavitymode, lasingwavelength, opticalthickness, reflectionbandwidth

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