Abstract: A three-quantum-well structure with nonuniform well width at active region of epitaxial wafer and a large asymmetric optical cavity structure at waveguide region are designed to improve the spectrum width and output power of superluminescent diode. A new device structure is proposed by using gain-clamped theory, and a multi-wavelength gain clamping system is designed. The nanoimprint technology is used to prepare a nanorod for multi-wavelength surface distributed feedback clamping system on device ridge mesa. Ridge length of pumping region in the fabricated device is 350 μm, the length of absorption region is 250 μm, and the messa is 5 μm in width and 1 μm in height. When the working current is 160 mA, the continuous output power at room temperature is 14.63 mW, the central wavelength is 848.7 nm, and the half band width is 22 nm. The new structure design can be used to gain the non-central wavelength of device, suppress the F-P oscillation of central wavelength , expand the spectral width, and realize the gain clamping of central wavelength. Key

Key words: superluminescentdiode, gainclamping, nanorod, asymmetricwaveguidestructure