Modeling and Simulation of Micro-cutting Mechanism of Single Crystal SiC by Molecular Dynamics

doi:10.3969/j.issn.1000-1093.2018.08.023

Abstract

Abstract: Single crystal SiC has high hardness and brittleness, resulting in its processing difficulties. The surface quality and processing precision of single crystal SiC can be significantly improved only when it is processed in the nano-scale plastic range. At the nanoscale, however, the change of material at femtosecond/picosecond cannot be obtained using finite element and experimental methods. The molecular dynamics（MD） is used to model the cutting process of single crystal 3C-SiC. The cutting force is changed at different cutting speeds and depths. The results show that the average tangential cutting forces are 737.34 nN, 635.29 nN and 587.09 nN at the cutting speeds of 50 m/s, 100 m/s and 200 m/s, respectively, and an appropriate cutting speed is helpful to reduce the cutting force for the single crystal SiC. Key

Key words: singlecrystalSiC, moleculardynamics, cuttingsimulation, micro-cuttingmechanism

CLC Number:

TG501.1

WANG Chao， LI Shu-juan， CHAI Peng， YAN Jun-chao， LI Yan. Modeling and Simulation of Micro-cutting Mechanism of Single Crystal SiC by Molecular Dynamics[J]. Acta Armamentarii, 2018, 39(8): 1648-1654.

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第39卷
第8期2018 年8月兵工学报ACTA
ARMAMENTARIIVol.39No.8Aug.2018

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