Welcome to Acta Armamentarii ! Today is

Acta Armamentarii ›› 2013, Vol. 34 ›› Issue (10): 1236-1242.doi: 10.3969/j.issn.1000-1093.2013.10.007

• Paper • Previous Articles     Next Articles

Simulation Design of a High Q Tunable Capacitor with Comb Structure

LI Yan-ning1,2, RUAN Yong1, YOU Zheng1, XU Hong-wei2, LI Yu-gang2   

  1. 1. Department of Precision Instruments, Tsinghua University, Beijing 100084,China; 2. Xi'an Institute of Modern Control Technology, Xi'an 710065, Shaanxi, China
  • Received:2012-08-27 Revised:2012-08-27 Online:2013-12-16
  • Contact: LI Yan-ning E-mail:lynx3333@163. com

Abstract: A design scheme of micro-electro-mechanical system (MEMS) tunable capacitor with comb structure is proposed. Simulation design was implemented in terms of structure, electrical properties and process. FEM simulation indicates that, for the tunable capacitor, the capacitance tuning ratio is 3. 45:1, the tuning range is 88. 16 ~392. 19 fF at 67 V drive voltage, the resonant frequency is 36 GHz, Q fac- tor is 223 (1 GHz), and the reflection attenuation is 0. 002 25 dB, insertion loss is 42. 75 dB, respec- tively. Compared with other tunable capacitors, the design has high Q, high adjustable capacitance rate and simple process.

Key words: electronics technology, tunable capacitor, micro-electro-mechanical system, simulation de- sign, serpentine spring, Q factor

CLC Number: