叉指式高 Q 值可变电容仿真设计

doi:10.3969/j.issn.1000-1093.2013.10.007

兵工学报 ›› 2013, Vol. 34 ›› Issue (10): 1236-1242.doi: 10.3969/j.issn.1000-1093.2013.10.007

叉指式高 Q 值可变电容仿真设计

李延宁^1,2, 阮勇¹, 尤政¹, 徐宏伟², 黎玉刚²

1. 清华大学精密仪器系, 北京 100084; 2. 西安现代控制技术研究所, 陕西西安 710065

收稿日期:2012-08-27 修回日期:2012-08-27 上线日期:2013-12-16
作者简介:李延宁(1987—),男,助理工程师。

Simulation Design of a High Q Tunable Capacitor with Comb Structure

LI Yan-ning^1,2, RUAN Yong¹, YOU Zheng¹, XU Hong-wei², LI Yu-gang²

1. Department of Precision Instruments, Tsinghua University, Beijing 100084,China; 2. Xi'an Institute of Modern Control Technology, Xi'an 710065, Shaanxi, China

Received:2012-08-27 Revised:2012-08-27 Online:2013-12-16

摘要/Abstract

摘要： 提出了一种叉指式微机电系统(MEMS) 可变电容设计方案,并从结构、电学特性、工艺三方面进行了仿真设计。由仿真结果可知:驱动电压为67 V 时,该设计理论电容可调率3. 45,电容调节范围88. 16 ~392. 19 fF,谐振频率36 GHz,Q 值223(1 GHz),反射衰减0. 002 25 dB,插入损耗 42. 75 dB. 与其他形式可变电容相比,该设计理论电容具有高Q 值、高电容可调率和工艺简单的技术优势。

关键词: 电子技术, 可变电容, 微机电系统, 仿真设计, 蛇形梁, Q 值

Abstract: A design scheme of micro-electro-mechanical system (MEMS) tunable capacitor with comb structure is proposed. Simulation design was implemented in terms of structure, electrical properties and process. FEM simulation indicates that, for the tunable capacitor, the capacitance tuning ratio is 3. 45：1, the tuning range is 88. 16 ~392. 19 fF at 67 V drive voltage, the resonant frequency is 36 GHz, Q fac- tor is 223 (1 GHz), and the reflection attenuation is 0. 002 25 dB, insertion loss is 42. 75 dB, respec- tively. Compared with other tunable capacitors, the design has high Q, high adjustable capacitance rate and simple process.

Key words: electronics technology, tunable capacitor, micro-electro-mechanical system, simulation de- sign, serpentine spring, Q factor

中图分类号:

李延宁, 阮勇, 尤政, 徐宏伟, 黎玉刚. 叉指式高 Q 值可变电容仿真设计[J]. 兵工学报, 2013, 34(10): 1236-1242.

LI Yan-ning, RUAN Yong, YOU Zheng, XU Hong-wei, LI Yu-gang. Simulation Design of a High Q Tunable Capacitor with Comb Structure[J]. Acta Armamentarii, 2013, 34(10): 1236-1242.

参考文献

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叉指式高 Q 值可变电容仿真设计

Simulation Design of a High Q Tunable Capacitor with Comb Structure

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