Micromachining Processes for Si Microchannel Plates

doi:10.3969/j.issn.1000-1093.2018.09.018

Abstract

Abstract: Microchannel plate (MCP) is a two-dimensional electronic multiplier widely used for detecting and imaging of electrons, ions, UV radiation, and X-ray. A method for fabricating Si-MCP was proposed and studied. Silicon microchannel arrays (SMA) are prepared by dry etching technology and electrochemical etching process, respectively. The characteristics of multiplex inductively coupled plasma (ICP) etching and photo-electrochemical etching are investigated and discussed. The results indicate that Si photo-electrochemical etching can be used to easily fabricate high aspect ratio microchannel arrays with smooth sidewall and sloped channel, and is more suitable for the preparation of Si-MCP. Si microchannel arrays with 6 μm spacing and more than 50 aspect ratio of microchannel were prepared. The insulation of Si-MCP substrate is solved using thick-layer oxidation. The continuous dynode is prepared by atomic layer deposition (ALD) process. Si-MCP samples were prepared. The measured results indicate that the electron gain of Si-MCP based on micromachining process is feasible.Key

Key words: siliconmicrochannelplate, photo-electrochemicaletching, atomiclayerdeposition, micromachining

CLC Number:

TN205

WANG Guo-zheng, YUAN Yun-long, YANG Chao, LING Hai-rong, WANG Ji, YANG Ji-kai, LI Ye, DUANMU Qing-duo. Micromachining Processes for Si Microchannel Plates[J]. Acta Armamentarii, 2018, 39(9): 1804-1810.

References

［1］白廷柱, 金伟其. 光电成像原理与技术[M]. 北京: 北京理工大学出版社, 2006: 199-200.
BAI Ting-zhu, JIN Wei-qi. Principle and technology of photoelectric imaging[M]. Beijing: Beijing Institute of Technology Press, 2006: 199-200. (in Chinese)
[2］ Herbert O F, Ronnie W H, Eric E D, et al. Comparative response of microchannel plate and channel electron multiplier detectors to penetrating radiation in space[J]. IEEE Transactions on Nuclear Science, 2015, 62(5): 2283-2293.
[3］ Jerry R H, William G T, John J F. Characteristics and applications of advanced technology microchannel plates [J]. Proceedings of SPIE，1990, 1306: 169-178.
[4］ Jerry R H, G William T. Microchannel electron multiplier: US, 5086248[P]. 1992-02-04.
[5］ Duanmu Q D, Ye L, Jiang D L, et al. Silicon microchannel array based on MEMS process[J]. Proceedings of SPIE，2002, 4928: 237-240.
[6］ Charles P B, Robert W B, John S, et al. Silicon etching process for making microchannel plates: US, 5997713[P]. 1999-12-07.
[7］ Lehmann A, Britting A, Eyrich W, et al. Improved lifetime of microchannel-plate PMTs[J]. Nuclear Instruments and Methods in Physics Research Section A, 2014, 766(1): 138-44.
[8］ Ertley C D, Siegmund O H W, Jelinsky S R, et al. Second generation large area microchannel plate flat panel phototubes[J]. Proceedings of SPIE， 2016,9915: 99152G.
[9］田景全, 朱宝仁, 姜德龙, 等. 测量微通道板电子增益的紫外光电法[J]. 兵工学报, 1987,8(2)： 67-71.
TIAN Jing-quan, ZHU Bao-ren, JIANG De-long, et al. UV photo electronic method for the measurement of MCP's gain[J]. Acta Armamentarii, 1987, 8(2): 67-71. (in Chinese)

[10］ Lehmann V. The physics of macropore formation in low-doped n-type silicon[J]. Journal of the Electrochemical Society, 1993, 140(10): 2839-2843.
[11］ Chang Y Z, Yu Z, Wen J, et al. Study of electrical current reconstruction on macropore arrays etched electrochemically on lightly-doped n-Si[J]. Applied Surface Science, 2016, 362(1): 538-544.
[12］ Linnor J, Baddel X, Leimann P. Macro pore and pillar array formation in silicon by electrochemical etching[J]. Physica Scripta, 2006(1): 72-76.
[13］ Chen X M, Lin J L, Ding Y, et al. Obtaining a high area ratio free-standing silicon microchannel plate via a modified electrochemical procedure[J]. Journal of Micromechanics and Microengineering, 2008, 18(3): 037003.
[14］ Lei Y H, Zhao Z G, Guo J C, et al. Disordered wall arrays by photo-assisted electrochemical etching in n-type silicon[J]. Journal of Semiconductors, 2016, 37(10): 88-92.
[15］ Ottow S, Lehmann V, Fll H. Development of three-dimensional microstructure processing using macroporous n-type silicon[J]. Applied Physics A, 1996, 63(2):153-159.

第39卷
第9期2018 年9月兵工学报ACTA
ARMAMENTARIIVol.39No.9Sep.2018

[1]	WANG Minghuan, LÜ Ming, HE Kailei, ZHENG Jinsong, XU Xuefeng. Effect of Cavitation Micro-jet in Interelectrode Gap on Material Erosion in Ultrasonic Assisted Electrochemical Micromachining [J]. Acta Armamentarii, 2023, 44(8): 2368-2380.
[2]	WANG Minghuan， WANG Jiajie， TONG Wenjun， CHEN Xia， XU Xuefeng， WANG Xindi. Multi-physical Field in IEG and Micro-dimple Forming in Ultrasonic Rolling Electrochemical Micromachining [J]. Acta Armamentarii, 2020, 41(4): 783-791.