Breakdown and Protection of Semiconductor Device in a Sequentially Fired Pulse Forming Network

doi:10.3969/j.issn.1000-1093.2017.12.007

Abstract

Abstract: In military applications, pulse forming network (PFN) needs to generate a flat-top current waveform by sequentially firing pulse forming units (PFUs)for the uniform acceleration of armature. However, when PFN works under this condition, a fly-wheel diode in PFN withstands a high reverse recovery voltage which may cause the failure of the fly-wheel diode. An approach in which the damage of semiconductor device can be eliminated by preventing from the reverse voltage is proposed through the theoretical analysis of reverse recovery process of diode. The mathematical expression of the proposed approach is derived from the equations of PFN circuit. This expression is used to calculate the parameters of a 600 kJ pulse power supply (PPS) constituted of 8 individual 75 kJ PFN modules. The PPS successfully generates an approximate flat-top current waveform without device damage. The test results show that the reverse recovery voltage can be eliminated by selecting proper circuit parameter. Key

Key words: ordancescienceandtechnology, pulseformingnetwork, pulsepowersupply, sequentialfire, reverserecovery

CLC Number:

LI Zhen-chao， JIN Chao-liang， DAI Ling， CHEN Chong， JU Lan， LIN Fu-chang. Breakdown and Protection of Semiconductor Device in a Sequentially Fired Pulse Forming Network[J]. Acta Armamentarii, 2017, 38(12): 2348-2353.

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第38卷第12期
2017 年12月兵工学报ACTA
ARMAMENTARIIVol.38No.12Dec.2017