Abstract: The electron multiplication gain needs to be corrected during operation of the EMCCD camera. According to the structural characteristics of the electron multiplying CCD and the charge multiplication of the single stage multiplier, the limitation of the existing multiplication model has to be analyzed in practical application. For TI EMCCD devices, the key parameters , including the operation voltage and temperature of EMCCD, of original multiplication model can be derived by simulation, a mathematical equation of the parameters is also presented by multiple regression analysis. And then the equation is introduced into the model, and a new method for determining the EMCCD gain is obtained, which is universal and simpler. It expands the application range of the original multiplication model. The simulation results of the model agree well with the actual data of EMCCD device. It shows that, the gain model is convenient for calculating the electron multiplier average gain as the charge multiplication gate voltage is changed.

Key words: optoelectronics and laser technology, EMCCD, electron multiplication gain, parameter calculation, simulation analysis