[1] Wang C S, Cheng W H, Hwang C J, et al. High-power low-divergence superradiance diode[J]. Applied Physics Letters, 1982, 41(7): 587-589. [2] Alphonse G A,Gilbert D B,Harvey M G,et al. High-power superluminescent diodes[J]. IEEE Journal of Quantum Electronics,1987,24(12):2454-2457. [3] Kondo S, Yasaka H, Noguchi Y, et al. Very wide spectrum multiquantum well superluminescent diode at 1.5 μm[J]. Electronics Letters, 2002, 28(2):132-133. [4] Kafar A, Stanczyk S, Targowski G,et al. High-optical-power InGaN superluminescent diodes with “j-shape” waveguide[J]. Applied Physics Express, 2013, 6(9):092102. [5] Ozaki N, Yasuda T, Ohkouchi S, et al. Near-infrared superluminescent diode using stacked self-assembled InAs quantum dots with controlled emission wavelengths[J]. Japanese Journal of Applied Physics, 2014, 53:04EG10. [6] Beal R, Moumanis K, Aimez V, et al. Enhanced spectrum superluminescent diodes fabricated by infrared laser rapid thermal annealing[J]. Optics & Laser Technology, 2013, 54(32):401-406. [7] Su H O, Kwon O K, Yoon K H, et al. Superluminescent diode with circular beam shape[J]. IEEE Photonics Technology Letters, 2013, 25(23):2289-2292. [8] Andreeva E V,Il'chenko S N,Kostin Y O,et al. Broadband superluminescent diodes of NIR range with quasi-Gaussian spectra[C]∥International Conference on Advanced Optoelectronics and Lasers. Sudak, Ukraine: IEEE,2013:114-116. [9] Oh S H, Park S, Baek Y, et al. Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD): US, US8363314[P]. 2011-06-23.
[10] 李辉,曲轶,张晶,等. 短波长宽光谱超辐射发光二极管[J]. 中国激光,2006,33(增刊):23-25. LI Hui,QU Yi,ZHANG Jing, et al. Short wavelengh wide-spectrum superluminescent diode[J]. Chinese Journal of Lasers,2006,33(S):23-25. (in Chinese) [11] 王飞飞,李新坤,梁德春,等. 大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管[J]. 发光学报,2016, 37(6):706-710. WANG Fei-fei,LI Xin-kun,LIANG De-chun, et al. High-power short-wavelength InAlGaAs/AlGaAs quantum-dot superluminescent diodes[J]. Chinese Journal of Luminescence,2016,37(6): 706-710. (in Chinese) [12] 段成丽,王振. 超辐射发光二极管的研究进展[J]. 半导体光电,2013,34(3):361-365,400. DUAN Cheng-li,WANG Zhen. Recent progress of super-luminescent diodes[J]. Semiconductor Optoelectronics,2013,34(3):361-365,400. (in Chinese) [13] 李辉,王玉霞,李梅,等. 高功率850 nm宽光谱大光腔超辐射发光二极管[J]. 中国激光,2006,33(5):613-616. LI Hui,WANG Yu-xia,LI Mei, et al. High power 850 nm large optical cavity wide spectrum superluminescent diode[J]. Chinese Journal of Lasers,2006,33(5):613-616. (in Chinese) [14] Guo R J, Zheng J S, Zhang Y S, et al. Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers[J]. Science Bulletin, 2015, 60(11):1026-1032. [15] 杜国同.半导体激光器件物理[M]. 长春:吉林大学出版社,2002: 258-259. DU Guo-tong. Physics of semiconductor laser decices[M]. Changchun: Jilin University Press,2002: 258-259. (in Chinese) [16] Asada M,Kameyama A,Suematsu Y. Gain and intervalence band absorption in quantum-well lasers [J]. Quantum Electron,1984,20(7):745-753. [17] 仲莉,王俊,冯小明.808 nm大功率无铝有源区非对称波导结构激光器[J].中国激光,2007,34(8):1038-1042. ZHONG Li,WANG Jun,FENG Xiao-ming. 808 nm waveguide structure[J]. Chinese of Lasers, 2007, 34(8):1038-1042. (in Chinese) [18] 王智浩. 纳米压印配套工艺研究及其在LED制造工艺中的应用[D]. 武汉:华中科技大学,2014:8-23. WANG Zhi-hao.The research on supporting process of nanoimprint lithography technology and its appliation in LED manufacturing industry[D]. Wuhan:Huazhong University of Science and Technology,2014:8-23.(in Chinese) [19] 智婷,陶涛,刘斌,等. GaN基纳米阵列LED器件制备及发光特性[J]. 发光学报,2016,37(12):1538-1544. ZHI Ting,TAO Tao,LIU Bin, et al. Fabrication and lum inescentproperty of based light-emitting diodes with arr aynanorods structure[J]. Chinese Journal of Luminescence,2016,37(12):1538-1544. (in Chinese) [20] 朱振东,施玉书,李伟,等. 室温纳米压印制备中的共性关键工艺问题[J]. 微纳电子技术,2017,54(1):43-47. ZHU Zhen-dong,SHI Yu-shu,LI Wei ,et al. Common and critical issues on the process of room temperature nano imprintlithography[J]. Micronanoelectronic Technology, 2017,54(1):43-47. (in Chinese)
第39卷 第2期2018 年2月兵工学报ACTA ARMAMENTARIIVol.39No.2Feb.2018
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