基于PIN二极管的快上升沿电磁脉冲防护模块设计与研究

doi:10.3969/j.issn.1000-1093.2018.10.021

兵工学报 ›› 2018, Vol. 39 ›› Issue (10): 2066-2072.doi: 10.3969/j.issn.1000-1093.2018.10.021

基于PIN二极管的快上升沿电磁脉冲防护模块设计与研究

李亚南，谭志良

（陆军工程大学石家庄校区静电与电磁防护研究所，河北石家庄 050003）

收稿日期:2018-01-24 修回日期:2018-01-24 上线日期:2018-11-19
通讯作者: 谭志良（1964—），男，教授，博士生导师 E-mail:tanzhiliang98@163.com
作者简介:李亚南（1988—），男，博士研究生。E-mail:lynang@126.com
基金资助:
国家自然科学基金项目(51277179)

Design and Research of the Fast Rise Time Electromagnetic Pulse Protection Module Based on PIN Diode

LI Ya-nan, TAN Zhi-liang

(Research Institute of Electrostatic and Electromagnetic Protection, Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, Hebei, China)

Received:2018-01-24 Revised:2018-01-24 Online:2018-11-19

摘要/Abstract

摘要： 为了研究PIN二极管对快上升沿电磁脉冲的响应，基于PIN二极管时域等效电路模型，仿真研究了PIN二极管电路在快上升沿电磁脉冲作用下的瞬态电压特性。以集总参数巴特沃斯低通滤波器电路为原型，通过拟合二极管寄生参数值，结合键合金丝电感参数，设计了一款基于PIN二极管的快上升沿电磁脉冲防护电路模块，并对防护电路模块的快上升沿电磁脉冲防护性能进行了测试。结果表明：在1~250 MHz短波、超短波频段内，防护模块的插损小于0.38 dB；当输入方波脉冲为4 000 V时，限幅响应时间小于2 ns，输出电平小于30 V，满足快上升沿电磁脉冲的防护要求。

关键词: 快上升沿电磁脉冲, PIN二极管, 尖峰泄漏, 防护模块

Abstract: The fast rise time electromagnetic pulse (FREMP) is an important cause of damage to electronic equipment, and the PIN diode can effectively suppress electromagnetic pulse. In order to investigate the transient response of PIN diodes to FREMP, a time-domain equivalent circuit model based on PIN diodes is adopted. And the transient voltage characteristic of PIN diode circuit under the effect of FREMP is analyzed. Considering the parasitic components of PIN diodes and the bonding wire inductance, the whole physical structure of FREMP protection module is set up based on Butterworth low pass filter model. A FREMP protection module is realized. The measured insertion loss of protection module is lower than 0.38 dB in 1-250 MHz. At large signal condition with input square wave pulse of 4 000 V, the response time is less than 2 ns and the output level is lower than 30 V, which meets the protection requirement of FREMP. Key

Key words: fastrisetimeelectromagneticpulse, PINdiode, spikeleakage, protectionmodule

中图分类号:

O441.5

李亚南，谭志良. 基于PIN二极管的快上升沿电磁脉冲防护模块设计与研究[J]. 兵工学报, 2018, 39(10): 2066-2072.

LI Ya-nan, TAN Zhi-liang. Design and Research of the Fast Rise Time Electromagnetic Pulse Protection Module Based on PIN Diode[J]. Acta Armamentarii, 2018, 39(10): 2066-2072.

参考文献

［1］张子剑, 陈曦, 李茜华, 等. 强电磁脉冲上升时间对RS触发器损伤阈值仿真分析［J］. 强激光与粒子束, 2017, 29(8): 55-60.
ZHANG Zi-jian, CHEN Xi, LI Qian-hua, et al. Simulation analysis of strong electromagnetic pulse rise time on damage threshold of RS flip-flop［J］. High Power Laser and Particle Beams, 2017, 29(8): 55-60. (in Chinese)
［2］ Montano R, Edirisinghe M, Cooray V, et al. Behavior of low-voltage surge protective devices under high-current derivative impulses［J］. Transactions on Power Delivery, 2007, 22(4): 2185-2190.
［3］ IEC 61000-4-2:2001 Electromagnetic compatibility (EMC)-Part 4: testing and measurement techniques-Section 24: test methods for protective devices for HEMP conducted disturbance［S］. Swit- zerland: IEC TC, 1997.
［4］王晨. 射频前端强电磁脉冲防护方法研究［D］. 长沙:国防科学技术大学, 2013: 7-11.
WANG Chen. Study of the strong electromagnetic pulse protection method for RF front-end［D］. Changsha：National University of Defense Technology, 2013: 7-11. (in Chinese)
［5］颜克文. 短波通信设备电磁防护技术研究［D］. 成都:电子科技大学, 2009:43-51.
YAN Ke-wen. Research on electromagnetic protection technology of short wave communication equipment［D］. Chengdu:University of Electronic Science and Technology of China, 2009:43-51.(in Chinese)
［6］郑生全, 邓峰, 王冬冬, 等. 电子设备和系统射频通道高功率微波电磁脉冲场-路综合防护方法综述［J］. 中国舰船研究, 2015, 10(2):7-13.
ZHENG Sheng-quan, DENG Feng, WANG Dong-dong, et al. Overview of the HPM field-circuit integrated protection methods for electronic equipment and system RF-channels［J］. Chinese Journal of Ship Research, 2015, 10(2):7-13. (in Chinese)
［7］谭志良, 刘尚合. 电子设备高功率电磁辐照效应［J］.高电压技术, 2005, 31(10):33-35.
TAN Zhi-liang, LIU Shang-he. Study of electromagnetic radiation effect on electronic equipment［J］. High Voltage Engineering, 2005, 31(10): 33-35.(in Chinese)
［8］张俊, 姜彦南, 张耀辉, 等. 纳秒脉冲下典型钳压型浪涌防护元件的响应特性［J］. 强激光与粒子束, 2016, 28(12): 131-136.
ZHANG Jun, JIANG Yan-nan, ZHANG Yao-hui, et al. Nanosecond pulse response of typical voltage-clamping surge protective devices［J］. High Power Laser and Particle Beams, 2016, 28(12): 131-136.(in Chinese)
［9］张希军, 杨洁, 张庆海. 瞬态电压抑制器在快上升沿电磁脉冲作用下的瞬态响应［J］. 高电压技术, 2012, 38(9):2242-2247.
ZHANG Xi-jun, YANG Jie, ZHANG Qing-hai. Transient response of transient voltage suppressor device under EMP with fast rise time［J］. High Voltage Engineering, 2012, 38(9):2242-2247. (in Chinese)

［10］ Caverly R H, Drozdovski N V, Drozdovskaia L M. SPICE modeling of microwave and RF control diodes［C］∥Proceedings of the 43th IEEE Midwest Symposium on the Circuits and Systems. Lansing, MI, US: IEEE, 2000: 28-31.
［11］陆凡. PIN二极管限幅器的瞬态电热耦合分析［D］. 南京：南京理工大学, 2015:48-51.
LU Fan. Transient electro-thermal coupling analysis of PIN diode limiter［D］. Nanjing:Nanjing University of Science and Technology, 2015:48-51. (in Chinese)
［12］刘国靖, 刘国至, 潘泉, 等. 高功率微波短脉冲雷达接收机保护装置设计［J］. 西安电子科技大学学报, 2002, 29(2):236-240.
LIU Guo-jing, LIU Guo-zhi, PAN Quan, et al. The fundamental design of HPM short-pulse radar receiver protectors［J］. Journal of Xidian University, 2002, 29(2):236-240.(in Chinese)
［13］张亚舟, 李贞晓, 田慧, 等. 基于反向开关晶体管的脉冲电源在电磁发射中的应用［J］. 兵工学报, 2017, 38(4): 658-662.
ZHANG Ya-zhou, LI Zhen-xiao, TIAN Hui, et al. Application of pulse power supply with RSD switch in electromagnetic launch［J］. Acta Armamentarii, 2017, 38(4): 658-662.(in Chinese)
［14］丁家峰. PIN二极管的物理机制、仿真模型及其应用研究［D］. 长沙:中南大学, 2001:13-14.
DING Jia-feng. Studies on mechanism, simulation models and applications of the PIN diode［D］. Changsha:Central South University, 2001:13-14. (in Chinese)
［15］ Kreyasu M, Takashima T. X-band PIN diode limiter with low spike leakage performances using re-entrant coaxial cavity［C］∥Proceedings of 2008 European Conference on Wireless Technology. Fort Worth, TX, US: IEEE, 2008: 735-738.
［16］张海伟, 史小卫. 高功率PIN限幅器设计及测试方案［J］. 强激光与粒子束, 2011, 23(11):3029-3033.
ZHANG Hai-wei, SHI Xiao-wei. High power PIN limiter design and test plan［J］. High Power Laser and Particle Beams, 2011, 23(11):3029-3033. (in Chinese)

第39卷
第10期2018 年10月兵工学报ACTA
ARMAMENTARIIVol.39No.10Oct.2018

[1]	贾文抖，林春生，孙玉绘，翟国君. 地磁场中磁目标的等效衰减磁矩定位方法[J]. 兵工学报, 2018, 39(2): 283-289.
[2]	黄刘宏，贺永胜，李跃波，刘锋，何为. 爆炸震动对整体隔震电磁屏蔽室屏蔽效能的影响[J]. 兵工学报, 2014, 35(12): 2072-2077.
[3]	1:卢新成,龚沈光,刘胜道;2:孙明. 轴转动调制腐蚀电流产生的极低頻电场的测定[J]. 兵工学报, 2004, 25(5): 544-546.

基于PIN二极管的快上升沿电磁脉冲防护模块设计与研究

Design and Research of the Fast Rise Time Electromagnetic Pulse Protection Module Based on PIN Diode

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

编辑推荐

Metrics

本文评价