硅微通道板微加工技术研究

doi:10.3969/j.issn.1000-1093.2018.09.018

兵工学报 ›› 2018, Vol. 39 ›› Issue (9): 1804-1810.doi: 10.3969/j.issn.1000-1093.2018.09.018

硅微通道板微加工技术研究

王国政，袁云龙，杨超，凌海容，王蓟，杨继凯，李野，端木庆铎

（长春理工大学理学院，吉林长春 130022）

收稿日期:2017-12-22 修回日期:2017-12-22 上线日期:2018-10-25
作者简介:王国政(1977—)，男，副教授，硕士生导师。E-mail: wguozheng@163.com
基金资助:
国家自然科学基金项目(61107027、51502023)；吉林省科技厅重点科技研发项目(20180201033GX)；吉林省教育厅项目(20160358)

Micromachining Processes for Si Microchannel Plates

WANG Guo-zheng, YUAN Yun-long, YANG Chao, LING Hai-rong, WANG Ji, YANG Ji-kai, LI Ye, DUANMU Qing-duo

(School of Science, Changchun University of Science and Technology, Changchun 130022, Jilin， China)

Received:2017-12-22 Revised:2017-12-22 Online:2018-10-25

摘要/Abstract

摘要： 微通道板(MCP)是二维通道电子倍增器，广泛用于电子、离子、紫外辐射和X-射线的探测与成像。提出一种硅微通道板(Si-MCP)制备工艺，分别采用干法刻蚀和电化学腐蚀微加工技术制备了硅微通道阵列（SMA）。重点研究了硅感应耦合等离子体刻蚀和光电化学腐蚀的特性，结果表明：硅光电化学腐蚀技术易于制备高长径比微通道，微通道侧壁更光滑、可制备倾斜通道、更适合制备Si-MCP. 制备出通道周期为6 μm、长径比大于50的SMA结构。采用厚层氧化实现了Si-MCP基体绝缘，采用原子层沉积工艺制备了连续倍增极，制作出Si-MCP样品。测试结果表明，采用半导体微加工技术制备的Si-MCP电子增益特性具有可行性。

关键词: 硅微通道板, 光电化学腐蚀, 原子层沉积, 微加工技术

Abstract: Microchannel plate (MCP) is a two-dimensional electronic multiplier widely used for detecting and imaging of electrons, ions, UV radiation, and X-ray. A method for fabricating Si-MCP was proposed and studied. Silicon microchannel arrays (SMA) are prepared by dry etching technology and electrochemical etching process, respectively. The characteristics of multiplex inductively coupled plasma (ICP) etching and photo-electrochemical etching are investigated and discussed. The results indicate that Si photo-electrochemical etching can be used to easily fabricate high aspect ratio microchannel arrays with smooth sidewall and sloped channel, and is more suitable for the preparation of Si-MCP. Si microchannel arrays with 6 μm spacing and more than 50 aspect ratio of microchannel were prepared. The insulation of Si-MCP substrate is solved using thick-layer oxidation. The continuous dynode is prepared by atomic layer deposition (ALD) process. Si-MCP samples were prepared. The measured results indicate that the electron gain of Si-MCP based on micromachining process is feasible.Key

Key words: siliconmicrochannelplate, photo-electrochemicaletching, atomiclayerdeposition, micromachining

中图分类号:

TN205

王国政，袁云龙，杨超，凌海容，王蓟，杨继凯，李野，端木庆铎. 硅微通道板微加工技术研究[J]. 兵工学报, 2018, 39(9): 1804-1810.

WANG Guo-zheng, YUAN Yun-long, YANG Chao, LING Hai-rong, WANG Ji, YANG Ji-kai, LI Ye, DUANMU Qing-duo. Micromachining Processes for Si Microchannel Plates[J]. Acta Armamentarii, 2018, 39(9): 1804-1810.

参考文献

［1］白廷柱, 金伟其. 光电成像原理与技术[M]. 北京: 北京理工大学出版社, 2006: 199-200.
BAI Ting-zhu, JIN Wei-qi. Principle and technology of photoelectric imaging[M]. Beijing: Beijing Institute of Technology Press, 2006: 199-200. (in Chinese)
[2］ Herbert O F, Ronnie W H, Eric E D, et al. Comparative response of microchannel plate and channel electron multiplier detectors to penetrating radiation in space[J]. IEEE Transactions on Nuclear Science, 2015, 62(5): 2283-2293.
[3］ Jerry R H, William G T, John J F. Characteristics and applications of advanced technology microchannel plates [J]. Proceedings of SPIE，1990, 1306: 169-178.
[4］ Jerry R H, G William T. Microchannel electron multiplier: US, 5086248[P]. 1992-02-04.
[5］ Duanmu Q D, Ye L, Jiang D L, et al. Silicon microchannel array based on MEMS process[J]. Proceedings of SPIE，2002, 4928: 237-240.
[6］ Charles P B, Robert W B, John S, et al. Silicon etching process for making microchannel plates: US, 5997713[P]. 1999-12-07.
[7］ Lehmann A, Britting A, Eyrich W, et al. Improved lifetime of microchannel-plate PMTs[J]. Nuclear Instruments and Methods in Physics Research Section A, 2014, 766(1): 138-44.
[8］ Ertley C D, Siegmund O H W, Jelinsky S R, et al. Second generation large area microchannel plate flat panel phototubes[J]. Proceedings of SPIE， 2016,9915: 99152G.
[9］田景全, 朱宝仁, 姜德龙, 等. 测量微通道板电子增益的紫外光电法[J]. 兵工学报, 1987,8(2)： 67-71.
TIAN Jing-quan, ZHU Bao-ren, JIANG De-long, et al. UV photo electronic method for the measurement of MCP's gain[J]. Acta Armamentarii, 1987, 8(2): 67-71. (in Chinese)

[10］ Lehmann V. The physics of macropore formation in low-doped n-type silicon[J]. Journal of the Electrochemical Society, 1993, 140(10): 2839-2843.
[11］ Chang Y Z, Yu Z, Wen J, et al. Study of electrical current reconstruction on macropore arrays etched electrochemically on lightly-doped n-Si[J]. Applied Surface Science, 2016, 362(1): 538-544.
[12］ Linnor J, Baddel X, Leimann P. Macro pore and pillar array formation in silicon by electrochemical etching[J]. Physica Scripta, 2006(1): 72-76.
[13］ Chen X M, Lin J L, Ding Y, et al. Obtaining a high area ratio free-standing silicon microchannel plate via a modified electrochemical procedure[J]. Journal of Micromechanics and Microengineering, 2008, 18(3): 037003.
[14］ Lei Y H, Zhao Z G, Guo J C, et al. Disordered wall arrays by photo-assisted electrochemical etching in n-type silicon[J]. Journal of Semiconductors, 2016, 37(10): 88-92.
[15］ Ottow S, Lehmann V, Fll H. Development of three-dimensional microstructure processing using macroporous n-type silicon[J]. Applied Physics A, 1996, 63(2):153-159.

第39卷
第9期2018 年9月兵工学报ACTA
ARMAMENTARIIVol.39No.9Sep.2018

硅微通道板微加工技术研究

Micromachining Processes for Si Microchannel Plates

PDF

可视化

被引次数

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 1

编辑推荐

Metrics

本文评价