GaN器件质子辐照与电场综合试验系统及方法

季启政; 刘尚合; 王志浩; 杨铭; 丁义刚; 王思展; 沈自才; 刘宇明

doi:10.12382/bgxb.2022.1115

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GaN器件质子辐照与电场综合试验系统及方法

更新时间：2025-08-18

- GaN器件质子辐照与电场综合试验系统及方法
- Comprehensive Proton Irradiation and Electric Field Testing System and Method for GaN Devices
- 兵工学报 2023年44卷第6期页码：1704-1712
- 作者机构：
  
  1. 陆军工程大学电磁环境效应重点实验室, 河北石家庄 050003
  2. 北京卫星环境工程研究所, 北京 100094
  3. 北京东方计量测试研究所, 北京 100086
- 作者简介：
  
  *邮箱: E-mail:linshh@cae.cn
- 基金信息：
  
  国家自然科学基金青年科学基金项目(61904007)
- DOI：10.12382/bgxb.2022.1115
  中图分类号：
- 收稿：2022-11-29，
  
  网络出版：2023-07-19，
  
  纸质出版：2023-06-30
- 稿件说明：
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季启政, 刘尚合, 王志浩, 等. GaN器件质子辐照与电场综合试验系统及方法[J]. 兵工学报, 2023,44(6):1704-1712.

Qizheng JI, Shanghe LIU, Zhihao WANG, et al. Comprehensive Proton Irradiation and Electric Field Testing System and Method for GaN Devices[J]. Acta Armamentarii, 2023, 44(6): 1704-1712.
季启政, 刘尚合, 王志浩, 等. GaN器件质子辐照与电场综合试验系统及方法[J]. 兵工学报, 2023,44(6):1704-1712. DOI： 10.12382/bgxb.2022.1115.

Qizheng JI, Shanghe LIU, Zhihao WANG, et al. Comprehensive Proton Irradiation and Electric Field Testing System and Method for GaN Devices[J]. Acta Armamentarii, 2023, 44(6): 1704-1712. DOI： 10.12382/bgxb.2022.1115.

摘要

基于GaN器件质子辐照损伤机制和退化特性

根据剂量深度分布等效拟合原理

提出与地球同步轨道质子辐照环境等效的多能质子综合辐照试验方法。针对空间内带电问题计算电路板材料的充电电位

设计用于内带电效应模拟的静电场和瞬态电场的模拟方法及装置。建立质子辐照与电场综合试验系统并开展初步的试验。研究结果表明:GaN器件在跨导峰值处的栅源电压随质子注量发生偏移;相对于单独质子辐照

质子和电场综合作用下器件特征参数变化速度更快

幅度更大

证明了所提试验方法及系统的有效性。

Abstract

Based on the proton irradiation damage mechanism and degradation characteristics of GaN devices

and according to the equivalent fitting principle of dose depth distribution

a comprehensive multi-energy proton irradiation testing method equivalent to the proton irradiation environment in geosynchronous orbit is proposed. The charging potential of circuit board materials is calculated for the problem of internal charging in space

and the simulation method and device for electrostatic field and transient electric field used for the simulation of internal charging effect are designed. A comprehensive proton irradiation and electric field testing system is established and preliminary tests are carried out. The test results showed that: the gate source voltage at peak transconductance of GaN devices shifts with the proton fluence. Compared with proton irradiation alone

the characteristic parameters of devices under the combined action of proton and electric field change faster and more significantly

which proves the effectiveness of the proposed testing method and system.

关键词

Keywords

references

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ZHANG Y , ZHAO X , LIU S H , et al . Flashover characteri sticso finsulation materials of spacecraftin duced by ESDEMP [J ] . Acta Armamentarii , 2022 , 43 ( 8 ): 1956 - 1965 . (in Chinese)

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