磁通门传感器激励电路模型分析

doi:10.3969/j.issn.1000-1093.2015.11.014

兵工学报 ›› 2015, Vol. 36 ›› Issue (11): 2111-2116.doi: 10.3969/j.issn.1000-1093.2015.11.014

磁通门传感器激励电路模型分析

刘文君，许振丰，李申高，刘波

(中国航天科工集团第三研究院 35研究所，北京 100013)

收稿日期:2015-01-16 修回日期:2015-01-16 上线日期:2016-02-02
作者简介:刘文君（1989—），男，硕士研究生
基金资助:
总装备部预先研究项目（513010603）

Analysis of Fluxgate Excitation Model

LIU Wen-jun, XU Zhen-feng, LI Shen-gao, LIU Bo

(No.35 Institute of the Third Academy, China Aerospace Science and Industry Corporation, Beijing 100013, China)

Received:2015-01-16 Revised:2015-01-16 Online:2016-02-02

摘要/Abstract

摘要： 为进一步探究三端式磁通门探头工作机理以及激磁过程中磁芯饱和过程变化形态，以变压器耦合原理和探头线圈自感为基础，结合数值分析方法建立含有变压器的三端式磁通门激励电路数学模型。计算结果表明，该数学模型能够较为正确地描述三端式磁通门探头激励过程，解决了以往三端式磁通门数学模型与实际测量结果差异大、可操作性差的问题。所提供的方法将有助于设计与调试人员针对激励电路中元件变化对激磁电流的影响程度进行探究、评估激磁过程中磁芯的饱和程度，也可为变压器参数指标范围的制定提供依据。

关键词: 半导体技术, 磁通门磁力仪, 变压器, 方波激励

Abstract: In order to explore the influence of excitation circuit parameters on the current of probe of three-tips fluxgate magnetometer, and provide a proper theoretical foundation for designing transformer parameters, a novel mathematical model is proposed based on transformer coupling and probe’s self-inductance through numerical analysis. The numerical results and the actual tests are matched. The proposed method provides a powerful help to design parameters of excitation circuit, and make further study on the relationship between circuit parameters and excitation current.

Key words: semiconductor, fluxgate magnetometer, transformer, square-wave excitation

中图分类号:

TM936.2

刘文君，许振丰，李申高，刘波. 磁通门传感器激励电路模型分析[J]. 兵工学报, 2015, 36(11): 2111-2116.

LIU Wen-jun, XU Zhen-feng, LI Shen-gao, LIU Bo. Analysis of Fluxgate Excitation Model[J]. Acta Armamentarii, 2015, 36(11): 2111-2116.

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磁通门传感器激励电路模型分析

Analysis of Fluxgate Excitation Model

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