[1] Robbins M S, Hadwen B J. The noise performance of electron multiplying charge-coupled devices[J]. IEEE Transactions on Electron Devices, 2003, 50(5): 1227-1232. [2] 张闻文,陈钱. 电子倍增CCD噪音特性研究[J]. 光子学报, 2009, 38(4): 756-760. ZHANG Wen-wen,CHEN Qian. The study of the noise characteristics of EMCCD[J]. Acta Photonica Sinica,2009,38(4): 756-760. (in Chinese) [3] Ingley R, Smith D R, Holland A D. Life testing of EMCCD gain characteristics[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2009, 600(2): 460-465. [4] 胡泊, 李彬华. 低温下 EMCCD 电子倍增模型[J]. 电子学报, 2013, 41(9): 1826-1830. HU Po, LI Bin-hua. Electron multiplication model of EMCCD in low temperature[J]. Acta Electronica Sinica, 2013, 41(9):1826-1830. (in Chinese) [5] 张灿林, 陈钱, 尹丽菊. 基于单一类型载流子的电子倍增 CCD 倍增模型[J]. 兵工学报, 2011, 32(5): 580-583. ZHANG Can-lin, CHEN Qian, YIN Li-ju. Multiplication model of electron multiplying CCD based on single type of carrier[J].Acta Armamentar, 2011,32(5):580-583.(in Chinese) [6] Maes W, De Meyer K, Van Overstraeten R. Impact ionization in silicon: a review and update[J]. Solid-State Electronics, 1990, 33(6): 705-718. [7] Robbins M S. Determining the multiplication of EMCCD sensor: US Patent 8,054,363[P]. 2011-11-8. [8] Thornber K K. Applications of scaling to problems in high-field electronic transport[J]. Journal of Applied Physics, 1981, 52(1): 279-290. [9] Valdinoci M, Ventura D, Vecchi M C, et al. Impact-ionization in silicon at large operating temperature[C]∥1999 International Conference on Simulation of Semiconductor Processes and Devices. Tokyo, Japan: IEEE, 1999: 27-30. [10] Daigle O, Carignan C, Blais-Ouellette S. Faint flux performance of an EMCCD[J]. Proceedings of SPIE, 2006,6276:62761-62767. [11] Texas Instruments Ltd. TC285SPD 1 004×1 002 Pixel ImpactronTM CCD Image Sensor [EB/OL]. (2003-10-15)[2005-10-15]. http:∥www.ti.com/sc/docs/stdterms.htm. [12] 杨虎,刘琼荪,钟波. 数理统计[M]. 北京:高等教育出版社,2004: 226-227. YANG Hu, LIU Qiong-sun, ZHONG Bo. Mathematical statistics[M]. Beijing: Higher Education Press, 2004:226-227. (in Chinese) [13] Texas Instruments Ltd. TC253SPD 680×500 Pixel ImpactronTM CCD Image Sensor [EB/OL]. (2003-07-15)[2005-09-15]. http:∥www.ti.com/sc/docs/stdterms.htm. |