SiC 单晶片研磨过程材料去除率仿真与试验研究

doi:10.3969/j.issn.1000-1093.2013.09.011

兵工学报 ›› 2013, Vol. 34 ›› Issue (9): 1125-1131.doi: 10.3969/j.issn.1000-1093.2013.09.011

SiC 单晶片研磨过程材料去除率仿真与试验研究

胡海明, 李淑娟, 高晓春, 李言

西安理工大学机械与精密仪器工程学院,陕西西安710048

收稿日期:2012-08-09 修回日期:2012-08-09 上线日期:2013-11-11
作者简介:胡海明(1988—),男,硕士研究生。
基金资助:
国家自然科学基金项目(51175420);陕西省科技攻关项目(2010K09-01);陕西省教育厅基金项目(11JK0849/11JS074)

Research on Polarization Discrimination Algorithm for Coherent Dual-source Angle Deception Interference

HU Hai-ming, LI Shu-juan, GAO Xiao-chun, LI Yan

School of Mechanical and Instrumental Engineering, Xi'an University of Technology, Xi'an 710048, Shaanxi, China

Received:2012-08-09 Revised:2012-08-09 Online:2013-11-11

摘要/Abstract

摘要：

分析了SiC 单晶片研磨过程的材料去除机理,采用统计方法描述了磨粒粒度的分布规律,推导出参与研磨过程的活动磨粒数量计算公式。依据SiC 单晶片—磨粒和研磨盘—磨粒接触处的变形情况,建立了SiC 单晶片研磨过程材料去除率( MRR) 的预测模型。以该模型为基础,讨论了研磨盘硬度、压力和磨粒粒度等因素对MRR 的影响,并进行了相同条件下的研磨试验。理论计算与试验结果对比分析表明:所建立的模型可以较准确地预测SiC 单晶片研磨过程的MRR;为其他单晶材料研磨过程MRR 的预测和控制提供了参考依据。

关键词: 机械制造工艺与设备, SiC 单晶片, 研磨过程, 材料去除率, 建模

Abstract:

The material removal mechanism in the lapping process of SiC monocrystal wafer is investigated, the size distribution of abrasive particles is described by using the statistical theory, and the equation of number of active abrasive particles in the lapping process is conducted. According to the deformations of wafer-particle and pad-particle interfaces, a novel model is developed for material removal rate (MRR) in the lapping process of SiC monocrystal wafers. The influences of pad hardness, pressure and particle size on MRR are analyzed based on the model. Compared with the theoretical model, the experiment results show that the model can predict the MRR more accurate than others in the lapping process of SiC monocrystal wafers, which provides a theoretical basis and foundation for predicting and controlling MRR in the lapping process of other monocrystal materials.

Key words: manufacturing processes and equipment, SiC monocrystal wafer, lapping process, material removal rate, modeling

中图分类号:

TH460. 25

胡海明, 李淑娟, 高晓春, 李言. SiC 单晶片研磨过程材料去除率仿真与试验研究[J]. 兵工学报, 2013, 34(9): 1125-1131.

HU Hai-ming, LI Shu-juan, GAO Xiao-chun, LI Yan. Research on Polarization Discrimination Algorithm for Coherent Dual-source Angle Deception Interference[J]. Acta Armamentarii, 2013, 34(9): 1125-1131.

参考文献

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SiC 单晶片研磨过程材料去除率仿真与试验研究

Research on Polarization Discrimination Algorithm for Coherent Dual-source Angle Deception Interference

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